MSE262_HW3_2009_final - MSE 262 Spring 09 Homework#3...

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MSE 262, Spring ‘09 Homework #3 Instructions: Due Thursday, March 12th, 2009. Turn in one solution per group and be sure to include the group letter, the names of the group members and their contributions. Show all the work in your solutions, including generated graphs and print outs of computer generated results. Please also staple solutions together. Problem 1: Intrinsic Properties a) Find the bandgap at 300K for the following materials: Si, Ge, GaAs, GaN. If the temperature is increased to 400K what difference would you see in the bandgap? b) In 3 sentences or less explain why is it so hard to make a Silicon laser? c) Knowing that GaAs has a much higher mobility than Silicon why is Silicon used so predominately in the IC industry? d) Using a computer , plot F(E) (equation 4.18) from 0-2eV for the case of E F =1eV for three temperatures: 10K, 300K, and 1000K. Make sure you use enough data points to see the slope at 10K. e) Differentiate F(E) with respect to E and find the slopes of F(E) at E F for the three temperatures in part d.
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  • Spring '09
  • Fermi level, intrinsic Fermi level

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