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5360_Final_Exam_take_home

# 5360_Final_Exam_take_home - the energy collected Determine...

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5360 Final Take Home Exam-Version 1 For the final exam your take home problem is to design a Si Based Radio isotope battery. The general structure is shown in figure 1. The battery consists of a radioisotope source and a thin P+N junction to convert the high energy electrons to electrical power. Note you do not have to be concerned about designing the oxide isolation or the radioisotope . 1) Back contact -The substrate is to be float zone silicon resistivity of the material you will use is 10 ohm-cm. Design the back contact process. What will the contact structure be ie. what metals at what thickness? How will you deposit these metals, what temperature will you anneal the back contact at 2) Patterning of the silicon substrate . In order to increase the surface area of the battery it is necessary to pattern the Si. The penetration depth of the high energy electrons is 5um design your surface patterning to maximize

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Unformatted text preview: the energy collected. Determine the photo-resist, and etching technology you are going to use. Draw the design of the masks which you are going to use to implement the etch process. Be sure that all of the structures are connected to the front contact. 3) Front contact- Design the front contact process. Draw the design of the mask. Estimate the contact resistance for the front contact. 4) Ion implantation-Ion implantation is to be used to form the n+ region of the contact. Design the thickness of the n+ region, design the ion implantation protocol (. How will you implement this patterned contact. What trade offs or limitations due the ion implantation impose on 2). Design the ion implantation mask, energy of implantations and dose. Design the annealing time and temperature. 5) Process sequence-Determine which order you will do 1-4 and the potential impacts...
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