ECEC_5360_Oxidation

ECEC_5360_Oxidation - Oxidation ECE 5360 Use of Chemical...

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Oxidation ECE 5360
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Harvard_Fabrication_2+3.ppt – 2006 2 Use of Chemical Vapor Deposition Dielectrics and Insulators SiO 2 Si 3 N 4 Conductors Poly-Silicon (doped and undoped) Tungsten Copper
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Harvard_Fabrication_2+3.ppt – 2006 3 Chemical Vapor Deposition (CVD) Atmospheric Pressure CVD (APCVD) Low Pressure CVD (LPCVD) Plasma Enhanced CVD (PECVD) Some Forms of Epitaxy Vapor Phase Epitaxy (VPE) Organometallic Vapor Phase Epitaxy (MOCVD, OMVPE) Introduce ALL atoms/compounds for producing a film in the gas phase Ideally no consumption of substrate materials Some level of surface reaction needed for adhesion Provide energy (heat, RF, photons) to induce chemical reaction
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Harvard_Fabrication_2+3.ppt – 2006 4 Step Coverage/Conformality
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Harvard_Fabrication_2+3.ppt – 2006 5 Deposited Dielectrics
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Harvard_Fabrication_2+3.ppt – 2006 6 Issues Want film growth (nucleation) only on the wafer surface (heterogeneous nucleation) Don’t want growth/nucleation in gas phase (homogeneous nucleation) Uniform film properties (thickness, composition, etc.) across the wafer and wafer-to-wafer Vertical/Lateral Growth (Conformal nature of coating, step coverage issues)
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Harvard_Fabrication_2+3.ppt – 2006 7 Pyrogenic CVD Amorphous, poly-silicon Single Crystal Silicon SiO 2 deposition
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Harvard_Fabrication_2+3.ppt – 2006 8
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This note was uploaded on 04/04/2009 for the course ECE 5360 taught by Professor Shealy during the Fall '07 term at Cornell.

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ECEC_5360_Oxidation - Oxidation ECE 5360 Use of Chemical...

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