ECE_536__Problem_Set_3

ECE_536__Problem_Set_3 - The correction term represents a...

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ECE 5360 Problem Set 3 Due Wednesday October 22 1. Your field oxidation process is carried out in the CNF using a furnace tube at 1 atm pressure of wet oxide (steam) at 1100C . Using the Deal Grove Model and the following expressions for the rate constant plot the oxide thickness versus time for periods up to 2 hours 2. a) Your gate oxidation process is carried out in the CNF a 1atm pressure of dry oxide calculate the thickness of the oxide for periods up to 2 hours. b) Using a correction term specified below to alter the growth rate in the initial stages recalculate and compare the two curves on the same graph.
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Unformatted text preview: The correction term represents a modified Deal Grove rate with an exponentially damping term (the damping has a characteristic length of 7nm) 3. Estimate the increase in field oxide Thickness during the gate oxidation step 4. In a small MOS device there may be a statistical variation in V T due to differences in Q f from one device to another. In a 0.13um technology minimum device (gate oxide area =.01um x .01um) with a 2.5nm gate oxide, what would the difference in threshold voltage be for devices with 0 or 1 fixed charge in the gate. How would this change if the gate was made of HfO 2 instead of SiO 2 ....
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ECE_536__Problem_Set_3 - The correction term represents a...

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