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Unformatted text preview: The correction term represents a modified Deal Grove rate with an exponentially damping term (the damping has a characteristic length of 7nm) 3. Estimate the increase in field oxide Thickness during the gate oxidation step 4. In a small MOS device there may be a statistical variation in V T due to differences in Q f from one device to another. In a 0.13um technology minimum device (gate oxide area =.01um x .01um) with a 2.5nm gate oxide, what would the difference in threshold voltage be for devices with 0 or 1 fixed charge in the gate. How would this change if the gate was made of HfO 2 instead of SiO 2 ....
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This note was uploaded on 04/04/2009 for the course ECE 5360 taught by Professor Shealy during the Fall '07 term at Cornell University (Engineering School).
- Fall '07