This preview has intentionally blurred sections. Sign up to view the full version.View Full Document
Unformatted text preview: Si 3 N 4 + 12H 2 A metal electrode is deposited and a C-V plot is made as shown below. A representative C-V plot is also shown for an identical structure except with thermally grown SiO 2 as the insulator. Explain the lateral shift in the C-V curve of the Si 3 N 4 . 4. A MOS structure is fabricated to make C-V measurements as shown below. The C-V plot shows the result if the P + diffusion is NOT present. Sketch the expected shape of the C-V plot with the P + diffusion. Explain. SiO 2 Si 3 N 4 Si V V C Si 3 N 4 f=1 MHz Si V V C SiO 2 P + N-...
View Full Document
This note was uploaded on 04/04/2009 for the course ECE 5360 taught by Professor Shealy during the Fall '07 term at Cornell.
- Fall '07