ECE_5360_Homework_Set_7

ECE_5360_Homework_Set_7 - Si 3 N 4 12H 2 A metal electrode...

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ECE 5360 Homework Set 7 Due Monday December 1, 2008 1. Show that the transconductance for the n channel MOSFET in saturation is given by : Also note that the tranconductance parameter is given by The measurement software produces both of these plots 2. Based on mask dimensions and post-implant diffusion, predict which T transistors will operate 3. An experimental MIS (I=insulator) structure is fabricated by depositing Si 3 N 4 (silicon nitride) on a silicon substrate. The nitride is deposited by directing a jet of silane and ammonia at the surface 3SiH 4 + 4NH 3
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Unformatted text preview: Si 3 N 4 + 12H 2 A metal electrode is deposited and a C-V plot is made as shown below. A representative C-V plot is also shown for an identical structure except with thermally grown SiO 2 as the insulator. Explain the lateral shift in the C-V curve of the Si 3 N 4 . 4. A MOS structure is fabricated to make C-V measurements as shown below. The C-V plot shows the result if the P + diffusion is NOT present. Sketch the expected shape of the C-V plot with the P + diffusion. Explain. SiO 2 Si 3 N 4 Si V V C Si 3 N 4 f=1 MHz Si V V C SiO 2 P + N-...
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This note was uploaded on 04/04/2009 for the course ECE 5360 taught by Professor Shealy during the Fall '07 term at Cornell.

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ECE_5360_Homework_Set_7 - Si 3 N 4 12H 2 A metal electrode...

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