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Problem_Set_4

# Problem_Set_4 - ECE 5360 Problem Set 4 Due Monday(Nov 3...

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Due Monday (Nov 3, 2008) 1. The structure shown below is implanted with oxygen using a 1 x 10 18 cm -2 implant at 200 keV (R P = 0.35 µm) . The left hand side is masked from the implant. Following the implant, a high temperature anneal is performed which forms stoichiometric SiO 2 in a buried layer on the right side. Calculate the structural dimensions on the right side following this anneal (oxide thickness, distance from the surface and all other important dimensions). You can assume the silicon atomic density is 5 x 10 22 atoms cm -3 , and the Si lattice planes are 0.25 nm apart. State any other assumptions you make. 2. A resistor is made as part of a high frequency analog integrated circuit as shown below. The N - epi layer forms the body of the resistor. If the width of the resistor in the direction into the paper is 2.5 µ m , what should the length X be to give a resistor of approximately 50k . The epilayer is doped with phosphorus at a concentration of 1 × 10 15 cm 3 and is 3 µ m thick. Mas k

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Problem_Set_4 - ECE 5360 Problem Set 4 Due Monday(Nov 3...

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