Sol_set__2 - 1. Consider an abrupt P+N junction with N a...

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Unformatted text preview: 1. Consider an abrupt P+N junction with N a =2x10 18 cm-3 and N D =1x10 15 cm-3 . If the minority carrier lifetime is W p =1x10-6 sec. a) Calculate and graph the p n (x) for a long diode of length L=100um (boundary condition p n (L)=p n0 ) . b) Calculate the current for a forward bias of .5V. c) Repeat a&b for a short diode of length 2.3 microns (boundary condition p n (L)=0). C lic k t o b u y N O W ! P D F-X Ch an g e w w w .d o cu-tr ac k .c o m C lic k t o b u y N O W ! P D F-X Ch an g e w w w .d o cu-tr ac k .c o m C lic k t o b u y N O W ! P D F-X Ch an g e w w w .d o cu-tr ac k .c o m C lic k t o b u y N O W ! P D F-X Ch an g e w w w .d o cu-tr ac k .c o m C lic k t o b u y N O W ! P D F-X Ch an g e w w w .d o cu-tr ac k .c o m C lic k t o b u y N O W ! P D F-X Ch an g e w w w .d o cu-tr ac k .c o m X=1:.01:100 %microns LP=5 Dp=4 tau=1e-6 L=100 LP=sqrt(Dp*tau)/1e-4 V=.5 Pno=1.45e10^2/1e15 Pn=Pno*exp(V/.0259) %P=Pn*(cosh(X/LP)-coth(L/LP)*sinh(X/LP))+Pno P=Pn*(sinh((L-X)/LP)/(sinh(L/LP)))...
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This note was uploaded on 04/04/2009 for the course ECE 5360 taught by Professor Shealy during the Fall '07 term at Cornell University (Engineering School).

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Sol_set__2 - 1. Consider an abrupt P+N junction with N a...

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