Soln_HW_7

Soln_HW_7 - Homework 7 Solutions 3 An experimental...

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Homework 7 Solutions 3. An experimental MIS (I=insulator) structure is fabricated by depositing Si 3 N 4 (silicon nitride) on a silicon substrate. The nitride is deposited by directing a jet of silane and ammonia at the surface 3SiH 4 + 4NH 3 Si 3 N 4 + 12H 2 A metal electrode is deposited and a C-V plot is made as shown below. A representative C-V plot is also shown for an identical structure except with thermally grown SiO 2 as the insulator. Explain the lateral shift in the C-V curve of the Si 3 N 4 . SiO 2 Si 3 N 4 Si V V C Si 3 N 4
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The plot above looks like the difference between the oxide C-V curve (ideal HF) and the nitride C-V curve (with interface charges). Thus, it is likely that the deposited nitride layer has unterminated bonds at the interface that give rise to fixed interface charges, shifting the C-V curve as shown. 4. A MOS structure is fabricated to make C-V measurements as shown below. The C-V plot shows the result if the P + diffusion is NOT present. Sketch the expected shape of the C-V plot with the P + diffusion. Explain. f=1 MHz
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This note was uploaded on 04/04/2009 for the course ECE 5360 taught by Professor Shealy during the Fall '07 term at Cornell.

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Soln_HW_7 - Homework 7 Solutions 3 An experimental...

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