Soln_Set_1 - PD F -X C h a n ge PD F -X C h a n ge O W ! N...

Info iconThis preview shows pages 1–5. Sign up to view the full content.

View Full Document Right Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: PD F -X C h a n ge PD F -X C h a n ge O W ! N y bu to k lic C m C lic k to bu y N .c O W ! w .d o w o .d o c u -tr a c k c u -tr a c k .c 1. Assuming dopant atoms are universally distributed in a silicon crystal, how far apart are these atoms when the doping concentration is (a) 1015cm-3 (b) 5x1020cm-3 1. Estimate the resistivity of pure silicon in ohm-cm at (a) room temperature (b) 77K, and (c) 1000C. Neglect the temperature dependence of the carrier mobility in making this estimate o m w w w w PD F -X C h a n ge PD F -X C h a n ge O W ! N y bu to k lic C m C lic k to bu y N .c O W ! w .d o w o .d o c u -tr a c k c u -tr a c k .c 1. (a) Show that the minimum conductivity of a semiconductor sample occurs when 1 (b) What is the expression for minimum conductivity? (c) Is value greatly different than the value calculated in problem 2? o m w w w w PD F -X C h a n ge PD F -X C h a n ge O W ! N y bu to k lic C m C lic k to bu y N .c O W ! w .d o w o .d o c u -tr a c k c u -tr a c k .c 1. When an Au atom sits on a lattice site in a silicon crystal, it can act as either a donor or an acceptor. ED and EA levels both exist for the Au and both are close to the middle of the silicon bandgap. If a small concentration of Au is placed in an N-type silicon crystal, will the Au o m w w w w PD F -X C h a n ge PD F -X C h a n ge O W ! N y bu to k lic C m C lic k to bu y N .c O W ! w .d o w o .d o c u -tr a c k c u -tr a c k .c 1. A silicon diode has doping concentrations on the N and P sides of ND=1x10 19 cm-3 and of NA=1x1015cm-3. Calculate the process temperature at which the two sides of the diode becomes intrinsic. 1. A piece if N-type Silicon has a donor level ED=.01eV. Assuming there are no other impurities in the crystal, what is the position of the Fermi level at absolute zero? o m w w w w PD F -X C h a n ge PD F -X C h a n ge O W ! N y bu to k lic C m C lic k to bu y N .c O W ! w .d o w o .d o c u -tr a c k c u -tr a c k .c o m w w w w ...
View Full Document

This note was uploaded on 04/04/2009 for the course ECE 5360 taught by Professor Shealy during the Fall '07 term at Cornell University (Engineering School).

Page1 / 5

Soln_Set_1 - PD F -X C h a n ge PD F -X C h a n ge O W ! N...

This preview shows document pages 1 - 5. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online