2N4401 - 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 E...

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NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. MMBT4401 2N4401 Absolute Maximum Ratings* TA = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Parameter Value Units V CEO Collector-Emitter Voltage 40 V V CBO Collector-Base Voltage 60 V V EBO Emitter-Base Voltage 6.0 V I C Collector Current - Continuous 600 mA T J , T stg Operating and Storage Junction Temperature Range -55 to +150 ° C Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N4401 *MMBT4401 P D Total Device Dissipation Derate above 25 ° C 625 5.0 350 2.8 mW mW/ ° C R θ JC Thermal Resistance, Junction to Case 83.3 ° C/W R θ JA Thermal Resistance, Junction to Ambient 200 357 ° C/W C B E TO-92 C B E SOT-23 Mark: 2X * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation 2N4401 / MMBT4401 2N4401/MMBT4401, Rev A
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3 2N4401 / MMBT4401 Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS V (BR)CEO Collector-Emitter Breakdown Voltage* I C = 1.0 mA, I B = 0 40 V V (BR)CBO Collector-Base Breakdown Voltage I C = 0.1 mA, I E = 0 60 V V (BR)EBO Emitter-Base Breakdown Voltage I E = 0.1 mA, I C = 0 6.0 V I BL Base Cutoff Current V CE = 35 V, V EB = 0.4 V 0.1 µ A I CEX Collector Cutoff Current V CE = 35 V, V EB = 0.4 V 0.1 µ A ON CHARACTERISTICS* h FE DC Current Gain I C = 0.1 mA, V CE = 1.0 V I C = 1.0 mA, V CE = 1.0 V I C = 10 mA, V CE = 1.0 V I C = 150 mA, V CE = 1.0 V I C = 500 mA, V CE = 2.0 V 20 40 80 100 40 300 V CE(sat) Collector-Emitter Saturation Voltage I C = 150 mA, I B = 15 mA I C = 500 mA, I B = 50 mA 0.4 0.75 V V V BE(sat) Base-Emitter Saturation Voltage I C = 150 mA, I B = 15 mA I C = 500 mA, I B = 50 mA 0.75 0.95 1.2 V V
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2N4401 - 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 E...

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