G. Rizzoni, Principles and Applications of Electrical Engineering Problem solutions, Chapter 11 11.1 Chapter 11 Instructor Notes Chapter 11 introduces field-effect transistors. The material on transistors has been reorganized in this 4thEdition, and is now divided into two independent chapters, one on bipolar devices, and one on field-effect devices. The two chapters are functionally independent, except for the fact that Section 10.1, introducing the concept of transistors as amplifiers and switches, can be covered prior to starting Chapter 11 if the instructor decides to only teach field-effect devices. Section 11.1 briefly reviews the classification and symbols for the major families of field-effect devices. Section 11.2 introduces the fundamental ideas behind the operation of N-channel field-effect enhancement-mode transistors, and illustrates the calculation of the state and operating point of basic field-effect transistor circuits. A brief explanation of P-channel devices is also presented in this section. Section 11.3 briefly outlines the operation of MOSFET amplifiers. Section 11.4 introduces the analysis of MOSFET switches and presents CMOS gates. The box Focus on Measurements: MOSFET bidirectional analog gate(pp. 572-573) presents ananalog application of CMOS technology. The end-of-chapter problems are straightforward applications of the concepts illustrated in the chapter. Learning Objectives 1. Understand the classification of field-effect transistors. Section 1.2. Learn the basic operation of enhancement-mode MOSFETs by understanding their i-vcurves and defining equations. Section 2.3. Learn how enhancement-mode MOSFET circuits are biased. Section 2.4. Understand the concept and operation of FET amplifiers. Section 35. Understand the concept and operation of FET switches. Section 4. 6. Analyze FET switches and digital gates. Section 4.