lab_report1_sp08

lab_report1_sp08 - Lab Report 1 Table of Contents 1....

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Lab Report 1 Table of Contents 1. 2. Process Procedures (20 points) 3. Calculations (36 Points) 4. Questions (30 Points) 5. Bonus Questions (10 Points) Total Points = 110 possible (graded out of 100) Please be sure to include the requirement signature regarding academic honesty. All lab group members should print out this page, sign on the attached form, and include it with your Lab Report. Thank you! REPORTS MUST BE WORD PROCESSED (EXCEPT FOR SKETCHES AND HAND WRITTEN CALCULATIONS) Each group of students will submit one joint report. There will be a 20 PAGE max limit on the report. Profiles & Layout and Calculations do not count towards this page limit. FOLLOW THE ATTACHED TEMPLATE FORMAT FOR THE REPORT. STUDENTS NOT FOLLOWING THIS FORMAT WILL BE DEDUCTED 10% PER SECTION DEVIATING FROM TEMPLATE. When possible, be concise and use structured bullet points! Due Date: To be determined. Turn in at Rosita’s Office in 253 Cory.
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10% Deduction for Late Reports Per day
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I. Draw cross-sectional profiles of a MOSFET (test structure 8) after each of the steps: W1: Staring Wafer W2: Field Oxidation W3: ACTV Photolithography and Etch W4: Gate Oxidation W5: Polysilicon CVD W6: POLY Lithography and Etch, Source/Drain Clear W7a: Spin-on Glass + Source/Drain Pre-diffusion W7b: Source/Drain Drive-in + Intermediate Oxidation W8: CONT Photolithography and Etch W9: Aluminum Evaporation W10: METL Photolithography + Etch Indicate all layers. Label each feature and indicate thicknesses (make roughly proportional sketches). Illustrate and describe important details: non-planar interfaces from thermal oxidation isotropic etch profiles point-source Al evaporation thermal oxidation growth These drawings should have significantly more detail than those on the lab manual website. See the diagram below for the exact cross-sections in question. (5 Points)
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B. Draw top views of the same thin-oxide MOSFET (test structure 8) after each of the four photolithography steps. [ACTV, POLY, CONT, METL] (4 Points) C. Draw cross-sectional profiles of the bimorph ( MEMS - test structure 18) after each of the 12 major processing steps (including XeF 2 release etch), in the same fashion that you did for the MOSFET. See the diagram below for the exact cross- sections in question. The line runs through both contact holes and across a break between the Polystructure. (5 Points)
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II. Process Procedures (20 Points) [Refer to Template at the back of the Report] A. Describe monitoring measurements that were done during processing: Film color Line Width Thickness Resistivity Vernier Determine whether each layer was overetched or underetched? Did you purposely over/underetch? Why? Describe how the verniers are used to measure misalignment.
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This note was uploaded on 04/11/2009 for the course EE 438L taught by Professor Kaviani during the Spring '09 term at USC.

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lab_report1_sp08 - Lab Report 1 Table of Contents 1....

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