Week-3-Si-Wafers-II

Week-3-Si-Wafers-II - EE-438L :Introduction to...

Info iconThis preview shows pages 1–18. Sign up to view the full content.

View Full Document Right Arrow Icon
10/06/09 Dr. Kian Kaviani, Spring 2009, EE4 1 EE-438L :Introduction to Microelectronics Processing Dr. Kian Kaviani Ming Hsieh Electrical Engineering Dept. Viterbi school of Engineering University of Southern California
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
10/06/09 Dr. Kian Kaviani, Spring 2009, EE4 2 Silicon Wafers Properties and Preparation
Background image of page 2
10/06/09 Dr. Kian Kaviani, Spring 2009, EE4 3 Silicon Wafer Preparation
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
10/06/09 Dr. Kian Kaviani, Spring 2009, EE4 4 From Sand to EGS
Background image of page 4
10/06/09 Dr. Kian Kaviani, Spring 2009, EE4 5 Choklarski Pulling from the Melt
Background image of page 5

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
10/06/09 Dr. Kian Kaviani, Spring 2009, EE4 6 Choklarski Technique
Background image of page 6
10/06/09 Dr. Kian Kaviani, Spring 2009, EE4 7 Choklarski Technique
Background image of page 7

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
10/06/09 Dr. Kian Kaviani, Spring 2009, EE4 8 Choklarski Technique: Doping The segregation coefficients of different dopants decide the ease of doping of the ingot. Impurity Al As B C Cu Fe O P Sb K 0 0.002 0.3 0.8 0.007 0.0004 0.000008 1.25 0.35 0.023
Background image of page 8
10/06/09 Dr. Kian Kaviani, Spring 2009, EE4 9 Wafer Flats and Notch
Background image of page 9

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
10/06/09 Dr. Kian Kaviani, Spring 2009, EE4 10 Slicing the Ingot into Wafers
Background image of page 10
10/06/09 Dr. Kian Kaviani, Spring 2009, EE4 11 Grinding the Edges of the Wafer
Background image of page 11

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
10/06/09 Dr. Kian Kaviani, Spring 2009, EE4 12 Grinding the Edges of the Wafer
Background image of page 12
10/06/09 Dr. Kian Kaviani, Spring 2009, EE4 13 Wafer Laser Marking
Background image of page 13

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
10/06/09 Dr. Kian Kaviani, Spring 2009, EE4 14 Requirement for the Silicon Wafers in for the ULSI Era Property Choklarski Requirement for ULSI Resistivity (N – type) 1 – 50 Resistivity (P – type) 0.005 – 50 Resistivity Gradient (%) 5% – 10 % < 1% Oxygen (ppma) 5 – 25 Uniform & Controlled Carbon (ppma) 1 – 5 < 0.1 Dislocation (per cm2) < 500 < 1 Diameter (mm) Up to 300 Up to 300 Wafer Bow ( μ m) < 25 < 5 Surface Flatness ( μ m) < 5 < 1 Heavy Metal Impurities < 1 ppb < 0.001 ppb
Background image of page 14
10/06/09 Dr. Kian Kaviani, Spring 2009, EE4 15 Defects in Crystalline Materials There are four types of crystalline defects in Silicon: 1: Point Defects, 0 dimension - 2: Line Defects, 1 dimensional 3: Area Defects, 2 dimensional 4: Volume Defects, 3 dimensional
Background image of page 15

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
10/06/09 Dr. Kian Kaviani, Spring 2009, EE4 16 Defects in Crystalline Materials Point Defects : (a) Schottky defects (b) Interstitial arriving from the surface (c) Frenkel defects
Background image of page 16
10/06/09 Dr. Kian Kaviani, Spring 2009, EE4 17 Point Defects: Schottky Defects Equilibrium Concentration of Schottky defects (Nv): Nv =N0 exp(-Ea/KT), where N0 = 5E22 At T = 300 K, Nv =5E-12 /cm3 At T = 1000 K, Nv= 5E10 /cm3 (22 order of magnitude increase !!)
Background image of page 17

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 18
This is the end of the preview. Sign up to access the rest of the document.

Page1 / 41

Week-3-Si-Wafers-II - EE-438L :Introduction to...

This preview shows document pages 1 - 18. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online