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Week-14-Testing-1

Week-14-Testing-1 - Electrical Characterization of the...

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10/06/09 Dr. Kian Kaviani - Spring 2009 EE 1 Electrical Characterization of the Finished Wafers Part – I Dr. Kian Kaviani Hsieh Ming Electrical Engineering Dept. USC Viterbi School of Engineering
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10/06/09 Dr. Kian Kaviani - Spring 2009 EE 2 Sheet Resistance Measurements The resistance R of a rectangular block of uniformly doped material is given by: R = ρ .L/A R = ( ρ. L)/(W.t) R = R sh (L / W) effective R : Resistivity of the material (ohm – cm) L : Length of the block (cm) W: Width of the block (cm) A : Area of cross section of the block (cm2) t : Thickness of the block (cm) R sh : Sheet Resistance of the block (ohm/square)
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10/06/09 Dr. Kian Kaviani - Spring 2009 EE 3 Sheet Resistance Measurements (L/W) effective: Effective Number of squares = (L/W) length + (L/W) pads + (L/W) bends The most commonly used techniques in industrial environment are the Transmission Line Measurement ( TLM ) and Transfer Line Method (also TLM !).
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10/06/09 Dr. Kian Kaviani - Spring 2009 EE 4 Transmission Line Method (TLM)
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Dr. Kian Kaviani - Spring 2009 EE 5 Transfer Line Method (TLM) The total Resistance (R T ) measured on the scope is sum of the Resistance due to the wire& probe tips (usually small and neglected) +Resistance due to the contact metal (R m ) + Resistance due to the metal- semiconductor contact (Ohmic Contact : R c ) and the resistance of the doped layer (R s ). R
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Week-14-Testing-1 - Electrical Characterization of the...

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