{[ promptMessage ]}

Bookmark it

{[ promptMessage ]}

ECE474S09_Lecture01 - 2 Si V gate = = ON n n-type Si =...

Info iconThis preview shows pages 1–14. Sign up to view the full content.

View Full Document Right Arrow Icon
ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University [email protected]
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Lecture 01: Course Introduction Physical Structure
Background image of page 2
Course Introduction:
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Course Introduction
Background image of page 4
Course Introduction: Grading
Background image of page 5

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Lecture 01: Course Introduction Physical Structure
Background image of page 6
High power n-channel field effect transistor n n Wilkipedia
Background image of page 7

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
High power n-channel field effect transistor
Background image of page 8
Background image of page 9

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Background image of page 10
Background image of page 11

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Background image of page 12
Background image of page 13

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Background image of page 14
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: 2 Si V gate = + = ON n n-type Si = extra electrons p-type Si = extra holes High power n-channel field effect transistor SiO 2 Si V gate = - = OFF n-type Si = extra electrons p-type Si = extra holes Silicon: sc = “semiconductor” SiO 2 = insulator Si = sc polySi = cheap sc highly doped = fake metal SiO 2 Si Doped polySi Cu Cu Wilkipedia Effective repeat unit = “Unit Cell”...
View Full Document

{[ snackBarMessage ]}