ECE474S09_Lecture01 - 2 Si V gate = + = ON n n-type Si =...

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ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu
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Lecture 01: Course Introduction Physical Structure
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Course Introduction:
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Course Introduction
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Course Introduction: Grading
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Lecture 01: Course Introduction Physical Structure
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High power n-channel field effect transistor n n Wilkipedia
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High power n-channel field effect transistor SiO
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Unformatted text preview: 2 Si V gate = + = ON n n-type Si = extra electrons p-type Si = extra holes High power n-channel field effect transistor SiO 2 Si V gate = - = OFF n-type Si = extra electrons p-type Si = extra holes Silicon: sc = semiconductor SiO 2 = insulator Si = sc polySi = cheap sc highly doped = fake metal SiO 2 Si Doped polySi Cu Cu Wilkipedia Effective repeat unit = Unit Cell...
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This note was uploaded on 04/14/2009 for the course ECE 474 taught by Professor Ayres during the Spring '09 term at Michigan State University.

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ECE474S09_Lecture01 - 2 Si V gate = + = ON n n-type Si =...

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