ECE474S09_Lecture17

# ECE474S09_Lecture17 - ECE 474 Principles of Electronic...

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ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University [email protected]

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Lecture 17: Chp. 03: Current State-of-Art Transistors: Energy Levels Chp. 04: Current State-of-Art Transistors: Diffusion Current I diff Chp. 05: Current State-of-Art Transistors: pn junction ON/ OFF circuit architecture Chp. 06: Current State-of-Art Transistors
Chp. 03: Current State-of-Art Transistors: Energy Levels Energy levels and the probability that an electron is in (“occupies”) an energy level: Fermi distribution probability function: # between 0 and 100% Probability depends on energies: how much the electron has: E (eV) how much the probability requires: E F (eV) There’s how much the energy level requires too: N(E) N 3D (E) N 2D (E) N 1D (E)

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Put these together and get concentration of electrons conduction n 0 : Units: Also work out the variations for concentration of holes: p 0 , and the increased concentrations of electrons: n and holes: p when you add
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## This note was uploaded on 04/14/2009 for the course ECE 474 taught by Professor Ayres during the Spring '09 term at Michigan State University.

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ECE474S09_Lecture17 - ECE 474 Principles of Electronic...

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