ECE474S09_Lecture18

# ECE474S09_Lecture18 - ECE 474 Principles of Electronic...

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ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University

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Chp. 03: Current State-of-Art Transistors: Energy Levels NEED: Energy levels and the probability that an electron is in (“occupies”) an energy level: Fermi distribution probability function: # between 0 and 100% Probability depends on energies: how much the electron has: E (eV) how much the probability requires: E F (eV) There’s how much the energy level requires too: N(E) N 3D (E) N 2D (E) N 1D (E) Lecture 18
ACTUALLY WORK WITH: Put these together and get concentration of electrons conduction n 0 : Units: Also work out the variations for concentration of holes: p 0 , and the increased concentrations of electrons when you add dopants. Use n and p to get current I drift : I drift = q( n μ n + p μ h )E, E = electric field (V/cm), μ = mobility (cm cm ) s V Chp 04: I = I drift + I diffusion Chp. 03: Current State-of-Art Transistors: Concentrations

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Probability f(E) for hot

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