ECE474S09_Lecture18 - ECE 474: Principles of Electronic...

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Unformatted text preview: ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu Chp. 03: Current State-of-Art Transistors: Energy Levels NEED: Energy levels and the probability that an electron is in (occupies) an energy level: Fermi distribution probability function: # between 0 and 100% Probability depends on energies: how much the electron has: E (eV) how much the probability requires: E F (eV) Theres how much the energy level requires too: N(E) N 3D (E) N 2D (E) N 1D (E) Lecture 18 ACTUALLY WORK WITH: Put these together and get concentration of electrons conduction n : Units: Also work out the variations for concentration of holes: p , and the increased concentrations of electrons when you add dopants. Use n and p to get current I drift : I drift = q( n n + p h )E, E = electric field (V/cm), = mobility (cm cm ) s V Chp 04: I = I drift + I diffusion Chp. 03: Current State-of-Art Transistors: ConcentrationsChp....
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ECE474S09_Lecture18 - ECE 474: Principles of Electronic...

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