ECE474S09_Lecture21 - ECE 474: Principles of Electronic...

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Unformatted text preview: ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University [email protected] Lecture 21: Chp. 03: Current State-of-Art Transistors Use n and p to get current I drift : I drift = q( n μ n + p μ h )E, E = electric field (V/cm), μ = mobility (cm cm ) s V Use Hall effect to experimentally get n /p 0 Put a potential difference/external field across a doped semiconductor to get a current going: V = I R I = (1/R) V = G V, G = conductance V in terms of Volts J = σ E, E = electric field (V/cm) σ = conductivity σ = 1/ ρ ρ = resistivity, related to resistance R = ρ L wt Consider current I in Amps. Can connect this to the electron n0 and hole p0 concentrations: I = charge/time = C/sec = Amp = q (concentration) (velocity) Area Consider current I in Amps. Can connect this to the electron n0 and hole p0 concentrations: I = charge/time = C/sec = Amp = q (concentration) (velocity) Area I = q(n velocity electron + p velocity hole ) Area What are these velocity values?! Consider current I in Amps. Can connect this to the Consider current I in Amps....
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This note was uploaded on 04/14/2009 for the course ECE 474 taught by Professor Ayres during the Spring '09 term at Michigan State University.

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ECE474S09_Lecture21 - ECE 474: Principles of Electronic...

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