ECE474S09_Lecture26 - ECE 474 Principles of Electronic...

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ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University [email protected]
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Lecture 26: Chp. 04: Current State-of-Art Transistors Photo-generated carriers Introduction of Diffusion Current OFF in a transistor ON in a transistor Where/where not is V = IR when the transistor is ON? Drift current versus Diffusion current Diffusion current: Concentration changes (gradient) as a source of current Diffusion energy level landscape External E - fields versus built-in E – fields due to Diffusion current
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Si n p n Si n p n Si n p n OFF I V I V Transistor: a device for binary logic (Chp. 06) ON Saturation regime ON Linear (ohmic) regime
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Si n p n Key: OFF Si 2 pn junctions = 1.11 eV
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Si n p n Key: OFF Si 2 pn junctions + depletion region (energy barrier) (Chp. 05) = 1.11 eV
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ON and Diffusion Current (Chp. 04): V DS = IR Where is the line of charge that creates the potential drop?
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ON and Diffusion Current: V DS = IR Where is the line of charge that creates the potential drop? At the Ohmic contacts (Chp. 05)
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ON and Diffusion Current: V DS = IR Where is an ordinary piece of n-type material?
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ON and Diffusion Current: V DS = IR Where is an ordinary piece of n-type material?
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ECE474S09_Lecture26 - ECE 474 Principles of Electronic...

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