ECE474S09_Lecture31

ECE474S09_Lecture31 - = 0.607 eV Neutral region p-side...

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ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University

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Lecture 31: Chp. 05: Current State-of-Art Transistors Introduction to pn junctions pn junction no battery: No battery V0: OFF Calculate V0 (3 ways!) Calculate maximum E-field E0 Calculate depletion region width W (xp0, xn0) pn junction with battery: Battery in Forward bias Vf: ON Battery in Reverse bias Vr: really good OFF
pn junction: another Built-in E-field E F p 0 = 10 13 cm -3 Junction Depletion region W n 0 = 10 17 cm -3 B B B- B- E F P+ P+ P P P P P P P Neutral region p-side Neutral region n-side E i E i E (x)

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pn junction: new: “Energy Barrier” E F p 0 = 10 13 cm -3 Junction Depletion region W n 0 = 10 17 cm -3 B B B- B- E F P+ P+ P P P P P P P qV 0 = 0.2 eV + 0.407 eV

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Unformatted text preview: = 0.607 eV Neutral region p-side Neutral region n-side E i E i E (x) pn junction: Evaluate the Energy Barrier E F E i E V E C E gap = 1.1 eV E i E V E C E gap = 1.1 eV 0.407 eV 0.2 eV p = 10 13 cm-3 n = 10 17 cm-3 E F qV = 0.2 eV + 0.407 eV = 0.607 eV Therefore: V = 0.607 V “contact potential – by definition an equilibrium quantity” p. 172 Another way to evaluate V : Another way to evaluate V : n(x) Another way to evaluate V : Another way to evaluate V : n(x) Example problem V0: Built in E-field E(x): Built in E-field E(x): Built in E-field E(x): Built in E-field E(x): -x p0 Built in E-field E(x): Built in E-field E(x): |E(x ) |-magnitude changes across the depletion region E(x )-direction is right to left...
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ECE474S09_Lecture31 - = 0.607 eV Neutral region p-side...

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