ECE474S09_Lecture34 - ECE 474: Principles of Electronic...

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ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu
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Lecture 34: Chp. 05: Current State-of-Art Transistors Metal-semiconductors junctions (interconnects) Introduction Example pn junction: Currents Example 5.4 Example 5.3 Pr. 5.8 V br in reverse bias
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Lecture 34: Chp. 05: Current State-of-Art Transistors Metal-semiconductors junctions (interconnects) Introduction Example pn junction: Currents Example 5.4 Example 5.3 Pr. 5.8 V br in reverse bias
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* o o e- B- P+ o e- e- * + V f - Interconnects
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@ Contacts: Use energy band diagrams to describe what is happening One question to answer: is it an Ohmic contact or a Schottky barrier contact? Interconnect contacts are key for nanotechnology: MOSFET: Ohmic contact = good NanoFET: SB contact = good
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Interconnect: An interface between a metal and a semiconductor. “Metalization”
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Interconnects: Different nature of a metal Lots of e- and No E gap Need different description
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Interconnects: E vacuum E vacuum Work Function of the metal Work Function of the semiconductor Electron Affinity of the semiconductor Different description
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When in contact: E Fm and E Fs align:
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Ohmic Contact: + - n + - Narrow charged strip e- on n-side To bring the Fermi energy level of the metal down: make the metal less n-type
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This note was uploaded on 04/14/2009 for the course ECE 476 taught by Professor Ayres during the Spring '09 term at Michigan State University.

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ECE474S09_Lecture34 - ECE 474: Principles of Electronic...

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