Lab10 FETs

Lab10 FETs - Title: FETs Richard Madison Haynie Partner:...

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Title: FETs Richard Madison Haynie Partner: Casey Hayes (All graphs are attached to back) Objective: To build various circuits with Field Effective Transistors and analyze them and also note differences from traditional bipolar transistors. We will look at a follower, current source, and variable resistor of which the follower is probably the most important. FET Characteristics: For this part of the experiment the circuit shown in figure-1 was constructed. For this circuit I D and V GS were measured using multi-meters for there corresponding resistances shown in table-1. I DSS which is when V GS =0V is shown and is 7.69mA this value is good because it is between the quoted maximum range of 4mA<I DSS <10mA. The plot of these values is shown in graph-1 which is used to find the pinch voltage V P . A line tangential to the point where I DSS occurs was approximated by fitting a linear curve to the I DSS point and the next one. This approximation is pretty good because the curve in this region is
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This note was uploaded on 05/11/2008 for the course PHY 333 taught by Professor Tsong during the Spring '08 term at ASU.

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Lab10 FETs - Title: FETs Richard Madison Haynie Partner:...

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