# Midterm1AF06 - BB 306 F06A MIDTERM EXAM#1 CLOSED BOOK 1/2...

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Unformatted text preview: BB 306 F06A MIDTERM EXAM #1 CLOSED BOOK + 1/2 Cheat Sheet State any assumptions and show all work. Part 1 (21 Points) — _ (1 point) PrimvourName: femur/W5 - — No unauthorized help given or received. I will not discuss this exam with another human being until aﬁer 11:00 am today. (1 point) Signature: gﬂﬂ MW 1. Small PN Junction in Silicon Your task is to design a Silicon diode that will ﬁt on a new integrated circuit whose minimum feature length is 45 nm. Consider the diode’s operation at room temperature, where VT = 25 mV. You may assume ni = 1010 cm'3. (15 points) A) Determine doping levels for the N side and P side of the junction to give the depletion region a width of 45 nm at zero bias. Select equal doping levels on each side of the junction. We WMSZ’ 50/440 29"” 1574/4’5’3’75 ‘ 2%" 72-47157/_ l5 3 {kn 24/” W/FﬁéWﬂ—S- ﬁg 20C ' :M' #;””’)2 (14! MM? #151 IV Ilka/3 .3 @ '41" : wﬂ’ 142 ' WA 2: : WﬂJﬁﬁﬁm/ﬂyiﬁﬁ) EMXW F01? WNW}; 2'9ﬂ27l/ If ‘3 26 .l J _ 55 :3 :x‘wi:o(. _ 3 X gm , \ V ‘Z is 6f we _ __ Mf- ’ /./9wofg , I éM€S§ % _/£:Vhi:/q ’52::1’ éuz‘iv») ' Vrﬂ’ "Qymv 10’”ar3) ’0’ 73671,, a» I g6 774? A/ : ﬁg; ,j'ﬂ’wpy: [7,8 ll/p : My? 0 “(4%; d C” a 44F WV ' ’ 02,”,7x asrxm 1w. 2' r : I; 1.3 ' gig/7049‘ 5775’?” 0”" oz =1. 27X/0?(V’w)bl 7 3 L Q WV (8. 1: wag) ; jam/ﬂ? / 3437/; V /0 (3 points) B) Determine the value of the maximum Electric ﬁeld in the junction at zero bias. my _ 02‘ mgm/ B W 05m“ ' “4/9 gig/mi”, ' 9L 5”” 3 oints C Determine the value of the junction capacitance at zero bias, if the junction has an area of 250 umz. p J9 F 9 3 . ___ z w a L ) C‘ f} - : “'¥xg’ggm 6’" '25?” , LE; : 5775’X/o F J’? W470 4-5'x m‘?aa4 /’“” : 9751“): (3 points) D) Compared with its value at zero bias, the junction capacitance will have a sjsde / loiér (circle the best answer, cross out the other answers) value under forward bias. Explain. 97";51 Irma, 5/45 ~;> M2 C . W 2. Semiconductor Fundamentals F0 6A A piece of Silicon has a uniform donor concentration of 6x1017 cm"3 and a uniform acceptor concentration of 2x10‘7 cm'3. An applied electric ﬁeld of +5 kV/cm exists in the piece of Silicon. Use the approximations on p. 61 of J aeger & Blalock to approximate carrier mobility. Assume B=1.08 x 1031 cm‘6 K‘3 for Silicon. Work this problem with VT: 0.041008 V. (3 points) A) Determine the value of temperature in degrees Celsius, where VT= 0.041008 V. T [/7- > ‘ . ’ 9’7 -‘ ,Wé’ » V f : ii ; if— : 4¥§777lr —275/( 910;, 7% K 8.62 w‘ 9/»? Mm J“ (3 points) B) Determine the intrinsic electron concentration in Silicon at the temperature, where VT: 0.041008 V. -£@« _ 3/ .4 - 3 /;/2 V m2 > g rggﬂ/F) - (LOW/0 6'” k jﬁ" 7577*) e“? [“ wmiml’) 71 ., : ﬂéOX/ﬂ2 6’77 4 . 3 v 17‘ : \$‘,00x/a/ (m 3 . . . W a!) 2 -l —l (3 pomts) C) Determlne the electron concentration. I? ‘ 3 ﬁg; -- » a: cm V S n : N1) ~/V/} z éx/okrmgﬂzx’ﬂ 5’" iii; it: i r ' ' v a ' 3 : 9200 Rat/3 >> 2m: 517 5/0”; L3 Km Icm‘ 441/6 7‘” “)6 (a 4m:- 2 -1 —1 r . v .. ’ ‘ cm V s ﬂ4%‘fflé 1/6”} 10'” W t (Laﬁé (3 points) D) Determine the hole concentration. 9 'E + 3 _ 14f /. cx/azrm‘ c, ,g '63:»:- i-GE-‘i‘cm' ’0‘ 7-; a vgzéLX/Dcmz ’7‘H0 m (3 points) E) Determine the electron mobility 1.; I V} 1; -4? f/Lé ': pan/7+ éx/d’? : 5WD 0’" Law a , L ﬂyz72-f/77W3ﬁﬂ : 2% 6”" “may? 2/5 View (3 points) F) Determine the electron diffusivity a a 0‘7 E- ., V. ; 2% ' WW” I W 5“ pm£ﬂn7/’ (3 points) G) Determine the electron drift current density # ’61 , m2. .7 _ . _/ 'Jmet: ﬂﬂﬂf : (/1, 040"?)[175 ,7633)/4Xl0,[wj[5'2§/) J 14?? W J” oz : 7%? 7:; t (2 points) (2 points) (2 points) 2. Semiconductor Fundamentals (cont’d) H) The piece of Silicon described on the previous page is (select only one answer) 1.N—type \/ 5.1&2 9.2&4 2. P-Type 6.1& 3 10.3 &4 3.1ntrinsic ( 7.1&Z\, ll.1,2,&3 4. Compensateii/g’ 8. 2 & 3 12. l, 2, & 4 0*: A/ p 084/; eémﬂkkzgeg/ Explain M: >M -} V~7yﬂf I) The following element(s behave(s) as donors in Silicon 1. Al 3. As @ 2. B . Ge 6. Si Explain Cp/me I 8/81/146wa @149 0146’ “VF/‘6’ var/wag 5/35 231714 ﬂw )7 J) The wing element(s) behave(s) as acceptors in Silicon 3. As 5. P 4. Ge 6. Si Explain Cp/Wm £2: e/em’vfs A”? are ﬂew a» Vy/d/me W261?” 744»: 55 ma WA W. p mm 15 ,1 C Carbon ’ 1:043; TE Thalile Mummy 13. 1, 3, & 4 14.2, 3, &4 15. 1, 2, 3, & 4 16. None of the above __L___ 7. All of the above 8. None of the above 315‘ 7. All of the above 8. None of the above 42 WA FO6A R.C. Jaeger & T.N. Blalock, Microelectronic Circuit Design, 2“d Edition (2004) McGraw-Hill, Table 2.2 p. 48 ...
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