# Midterm1BF07 - (1 point(1 point(3 points(3 points(3...

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Unformatted text preview: (1 point) (1 point) (3 points) (3 points) (3 points) (3 points) (2 points) (2 points) BB 306 F07B MIDTERM EXAM #1 CLOSED BOOK + 1/2 Cheat Sheet State any assumptions and show all work. Part 1 (16 Points) Part 2 (20 Points) 50). (1 77 0W5 Part 2 (12 Pomts) Total (50 Points) Print Your Name: ‘No unauthorized help given or received. I will not discuss this exam with another human being until after 11:00 am today. ﬂxﬂWM/ Signature: . . . . . . . 1 . For today’s exam, assume for Silicon at room temperature an intrinsw carrier concentration, n,- = 10 0 cm 3. 2. Semiconductor Fundamentals and PN Junction Diode Consider a PN junction formed between an n-type region of Silicon doped with a donor concentration of 3 1x1018 cm‘3 and a p—type region of Silicon doped with an acceptor concentration of 1x10'9 cm' . Please determine the values of the following quantities at room temperature with VT = 0.025 V. A) The total depletion—layer width at zero bias. D” p‘Mt C ‘9"57’ W/o: £52 _/_ +4 ‘ ; 2‘//,?x8,853r/0: 56'» , __ I l f (M y, 5‘ (Wm; +//%”.3)p,7791/ [wafﬂe : 9,0556%”: 573%? B) The depletion-layer width on the N side of the junction at zero bias. W/r 37.5"“? )(,7 : M : W : 35,9»:47 by "" H "‘77 -! ’14,? [p 0" C) The built-in potential, (bi. ﬂ - x: ~§ ﬂy “‘9 M (w ) M: #5 4% : v fr! “’7‘ szmV/7 #377” “Wyy () 7. , "i . M M ' D) The maximum electric ﬁeld. . . , 77v J: W. l ’6 _. ’26 : raj—:32— ; 5725’X/0 0,, .: 5225’044 . I'M)! W 55%”? t” E) Select the number of the region with the highest electron concentration: “IV I. The quasi-neutral region on the P—side. II. The space charge region on the P-side. Ill. The space charge region on the N—side. ' he quasi-negtral region on the N—side. % (@1760; re J51? %€ nay/r0? "11¢ u/e 7:004: 14 I1; , 29}; 14. wk» 115/47 . . 3' '3' - ‘ n — Explain. ﬂy: : z w; ; /0(m 3 ,h V7161» J M? /p’7(n/ 8(m9 g)” [’6 1017 E F) Using the numbering in part B, list the number(s) of any region(s) outside the depletion region: 1’ , IZ' / ﬁn ‘A/J :/0 .r x l l l l l (3 points) (3 points) (2 points) (2 points) (3 points) (3 points) (4 points) 2. Carrier concentrations and currents in semiconductors F07B A piece of Silicon has a uniform donor concentration of 1018 cm"3 and a uniform acceptor concentration of 2x10I7 cm'3. An applied electric ﬁeld of +10 kV/cm exists in the piece of Silicon. Please determine values and units for the following quantities at room temperature with V7 = 0.025 V. Use the mobility approximations from p. 55 ofJaeger & Blalock. A) B) C) D) E) 1T) G) .~ £373 2 _1 _1 Electron concentration. /8 3 I? 3 PL” " NT 'U.9t cm V S _ ‘ : [m' .. 2X10 (M; I “F ,ﬁ. M * [up W4; ,5; ,g 3.3 x Wicm-3 ; 39x /0 (M > 2 2-4; ' I . = ‘ 2 -l -l #9 a 43 +__—_ 447 (v.6 cm V 5 Hole concentration. p 5 I + ( 5.1,, )J 3 2 ~ _ :‘ .111- ; /p CM : /25—(M' 6.3x 3.8%,Cm‘ ’9 l/l gx/0,;2w'3 l3 Gov—3 4% 04,2. 6’”; ; f, HAW; n; are _,. ,. 7’0 ‘7‘“ ﬂy #8 *Q s: VS / 5 Hole diffusivity L (M; _ a W . yr =/7A0%J/2FMW —- w 2"“ Hole drift current density J}ﬁ?}ﬂ// ,6 : agnfiQ/Wﬂ—Eﬁjﬂzwwﬂ/m g. : /§,,,2 m2 Hole diffusion current densit \$77: p J; .4, ’ ” ﬂ ” // kw §§rm [if/VII” (i/mvxz‘ryfxm- :9 2%” Indicate the direction of each component of current at x = 0 pm by placing arrowheads on the lines below: . li' . ‘ 1/” s 0 1pm” :0 E jut/rill ) j-pdr'ifl ii. i l l l l l l (12 points) 3. Diode Logic Gate Please analyze the circuit shown to the right using the constant voltage drop model with V0,, = 0.7 V. Determine the Q-points for each diode and the voltage in the center oi the circuit, V X. + 5.0V or/fgj/gf p, + D; 04/ +9 1m ’" J F07B 50/14! F0“ \/X ' ‘14 3;,2i/rM‘V ’ F}— ;3/771/ 731/ 50 Vo2=*/'3’7V 9 V)" : . _ 2.993 WA WV / — f_____________—————’) .—v I’ ’ lkJL ' 'vx—M/ - '@ /4WLW/7 m / I; 3 “1755)” Wu» ﬂbb Mags I946»? / ngf" 5/5 ﬂat—7’7 u/ﬂ/ff Myxr£ / s y/prﬂé’ , [VOTE 3 ﬁg YMMV [Ir/f 7 in; / 1/5 4/ ﬂ/ﬂﬂf/ﬁS/j, ya ﬂpf M556 COM/VENT [AW 1‘! E) #ﬁﬂﬂwﬂé xx/A YW/A’ F/A’ﬁ?’ c/AcuwT/WI/t F6?” 77 ’42» ﬂ/Vﬂfﬁ ﬁxsz ﬂ/V yxukj X , NEW/7W5 mum; p} /It//A/£5 @240, i /&K¢5\$ 7W5 /rf‘ u/ﬂ/tﬂ #57”! 4 (/m7/iﬂ/C 5757 1/ j 77/1.” J), (55/5702? 1/4877" 70 7mg ...
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