# Midterm1S03 - (1 point(1 point(2 points(2 points(2 points(2...

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Unformatted text preview: (1 point) (1 point) (2 points) (2 points) (2 points) (2 points) (2 points) (2 points) Braun _ — — — EE 208-02 803 MIDTERM EXAM #1 CLOSED BOOK + 1/2 Cheat Sheet State any assumptions and show all work. 5 0/. (/1 rams Print Your Name: No unauthorized help given or received. Signature: ‘42» For the purposes of today’s exam, you may also assume for Silicon at room temperature that the intrinsic carrier concentration, m = 1010 01113, with B=1.08 X 1031 crn‘6 K3. 1. Semiconductor Fundamentals and PN Junction Diode Consider a PN junction formed between an n-type region of Silicon doped with a donor concentration of Please 5x1015 cm"3 and a p-type region of Silicon doped with an acceptor concentration of 6x1016 cm‘3. determine the following quantities at room temperature with VT: 0.025 V. A) The electrostatic potential in the n-type material, (1)5“. _ I)" 3 ‘ l7 __, 5X M? 5m . /I‘l 3 ﬂ/y ; g5ml’i 12m 1' a Yﬂ? V/ ’V/ ’7; *1 ' /6’ ("7" B) The electrostatic potential in the p-type material, tbsp. /é b3 , ﬂ _ éX/D (M r v- w, a; PM 134 7;:- : ~2>muﬂ7 ~———-——M - 0.3% V C) The built—in potential, (1),; l i t »-\ ii i I I .} ,,_ , Q) r ~ 55,; 5 .5326)”; (“\$5ch - D) Calculate the depletion layer width on the p-type side of the junction at zero bias. WP WWW ,, “M : , V 1 XP ' 1+ 13"? , gxmleags I 61.0545/qu A!» /+ gm” _; » 5/17 E) Calculate the depletion layer width on the n-type side of the junction at zero bias. X _ _ (44’6L7uw “ ‘ ’ " ' r. " 'r—“M '~ (msz ” éikjtf'léfﬂ/ﬁ F) Calculate the total depletion layer width at zero bias. (4 points) (4 points) (6 points) (6 points) (4 points) 2. Carrier concentrations and currents in semiconductors WE 0 Consider a piece of Silicon at room temperature containingP atoms E and B atoms with the proﬁles shown in the graph to the left. In addition, the E region has a constant electric ﬁeld of 20 V/cm. g VT = 0.025 V, an = 700 cmZ/(V s), and up = 250 cmz/(V s). ‘5’ U A) Please calculate the electron and hole concentrations at X = 0 pm. g -7 [b ,7 ﬂ ,>’-«>IH~ Q My >4}; >5 xé TV/f 4;; x49 1: 3A )0 6,», 21/3 / . /é N g ngl'” ( Vt”); 7' : EX]; [1‘7 2 v . ﬂﬂ) : M“ _ w Mimi-ﬁg , . ~3 we) ans/am ' 5 5 3 5 ("7 B) Please calculate the electron and hole concentrations at x = 5 pm. Z )3 l t & \ i 5 14/54») : 1/; W; : gym/5m 3’ Mo "m 3: 27% m Z . , 14- .l .217 .5 .5 ._ ’1 _ [D (it: ' ‘-§ )9[ ’ ~ ‘ 4 , 7:. 2 [M ﬁg“) 72 /0’%M‘3 M 7 C) Calculate the electron and hole drift current densities at x = 0 pm. : WM 2 / : mg: I ,. ' ‘ ’77& VI 7 V A ﬂ J/mfz‘ :Zﬂﬂag ; [MW {71295727335509 y/ 2,9726% D) Calculate the electron and hole diffusion current densities at x = 0 pm. ‘ 2 I v . v [M2 DH .3”, f}; 7040;: why-2125‘; ' - Z A~ mg. 4/ = 4.254;”? D :3 12/4 [6- Z 250 L/vs‘ 25;" b b - i; L ’9 / r h(’5’ﬁ"‘§ VIC/ﬂay») MIG \ 1' , .2. “l§«17)r/ﬂ cluvjl— 3X/déﬂ’fs7 A 4 ‘~ ' -,W/"—' V 7 I. ___'_; —- - gswa m s m, e = 6W 5 1 1a 1- 0 am v r I [IO/>7‘*)~,U(€'WQ__ :17 -. qlql‘icmq- 3535cm'3 v [044 lift/f: : “£0” 52m; -*(/'é)qb 0(6’23 3 S‘x/awhﬁm ﬂ, a 1' jaw/2 E) Indicate the direction of each component of current at X = 0 pm by placing arrowheads on the lines below: jndi/‘f jpdi/f . drzﬁ *6 . drift Jn ; Jp > (12 points) 3. Diode Logic Gate Please analyze the circuit shown to the left using the constant voltage :PVZ drop model with V0,7 = 0.7 V. Determine the Q-points for each diode x and the output voltage, VOW. 2:4 k0 H Y/AWM/Fj/gf : 0, MP «W A . < p a w ‘2; MW newt-w Vow 2) 3 ' ._ t I " D1 ' 7 le ﬂ'ﬂ/ﬂé Y} 5 .‘ your : [277V 7» I; 2m _: a; 1/» [Q/MAQ/Z/l’i): [2W \$2 5 3 ()2? V [7/ 67 VD} : IV ’ ’Z,’//<'JZ " éur .~, ll/ " 69,7!“ ‘5 ﬂ/L'f 713197 v pl, OFF 14/09/71 [(0, :ﬁ/l/é 15,3, ///7;§ D7 ﬂ; m WW" 1,2 :1; > 57 , W v -l/i alg, 1/ V112 v VJ); « ‘Q/V ...
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