# Microelectronic Circuit Design

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CHAPTER 2 2.1 Based upon Table 2.1, a resistivity of 2.6 μΩ -cm < 1 m Ω -cm, and aluminum is a conductor. 2.2 Based upon Table 2.1, a resistivity of 10 15 Ω -cm > 10 5 Ω -cm, and silicon dioxide is an insulator. 2.3 I max = 10 7 A cm 2 5 μ m ( ) 1 μ m ( ) 10 8 cm 2 μ m 2 ⎟ = 500 mA 2.4 = T x E BT n G i 5 3 10 62 . 8 exp For silicon, B = 1.08 x 10 31 and E G = 1.12 eV: n i = 2.01 x10 -10 /cm 3 6.73 x10 9 /cm 3 8.36 x 10 13 /cm 3 . For germanium, B = 2.31 x 10 30 and E G = 0.66 eV: n i = 35.9/cm 3 2.27 x10 13 /cm 3 8.04 x 10 15 /cm 3 . 2.5 Define an M-File: function f=temp(T) ni=1E14; f=ni^2-1.08e31*T^3*exp(-1.12/(8.62e-5*T)); n i = 10 14 /cm 3 for T = 506 K n i = 10 16 /cm 3 for T = 739 K 2.6 n i = BT 3 exp E G 8.62 x 10 5 T with B = 1.27x10 29 K 3 cm 6 T = 300 K and E G = 1.42 eV: n i = 2.21 x10 6 /cm 3 T = 100 K: n i = 6.03 x 10 -19 /cm 3 T = 500 K: n i = 2.79 x10 11 /cm 3 20

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