Midterm2S04

Midterm2S04 - EE 306 S04 MIDTERM EXAM #2 CLOSED BOOK + 1...

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I D EE 306 S04 MIDTERM EXAM #2 Braun CLOSED BOOK + 1 Cheat Sheet State any assumptions and show all work. Print Your Name: SOLUTIONS No unauthorized help given or received. Signature: Braun FOR THE ENTIRE EXAM, UNLESS OTHERWISE SPECIFIED, USE: The CVD model for all diodes -- including breakdown diodes -- with V on Z = 6.2 V. For FETs, V TN = - V TP = 0.8 V, K N = 100 μ A/V 2 , K P = 50 μ A/V 2 , γ = 0 V 1/2 , λ = 0 V -1 . Show all work, state any assumptions, and test hypotheses. 1. Diode Breakdown A) List the name of one common PN junction breakdown mechanism and explain it clearly and concisely. Hint: a drawing could help. Enter the name here: Avalanche Multiplication As the electric field accelerates electrons and holes, if the carriers gain sufficient kinetic energy, if they transfer some energy to the lattice, in a collision, they can produce additional electron-hole pairs. The newly generated carriers can also accelerate in the electric field and produce more new carriers, so the process can multiply the number of carriers rapidly and produce a large current. B) List the name of another common PN junction breakdown mechanism and explain it clearly and concisely.
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Midterm2S04 - EE 306 S04 MIDTERM EXAM #2 CLOSED BOOK + 1...

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