FinalS01 - (1 point(1 point EE 208-02 S01 FINAL EXAM Braun...

Info icon This preview shows pages 1–6. Sign up to view the full content.

View Full Document Right Arrow Icon
Image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Image of page 2
Image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Image of page 4
Image of page 5

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Image of page 6
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: (1 point) (1 point) EE 208-02 S01 FINAL EXAM Braun CLOSED BOOK + 2 Cheat Sheets State any assumptions and show all work. Part 1 5 Points 5 Parts 2—3 (12 Points Print Your Name: 0 L V- T/ ‘7 ’VJ Part 4 8 Points Part 5 15 Points No unauthorized help given or received. Part 6 10 Points Total 52 Points Signature: /f/’%/{fz,. For the purposes of today’s exam, you may assume that the electron mobility in Silicon is 1000 cmz/V s and the hole mobility is 500 cm2/Vs. You may also assume for Silicon at room temperature that the intrinsic carrier concentration, n,- = 1010 cm'3, with B=1.08 x 1031 cm'6 K3. "4'“ D‘kT Tu1v‘n41'nv‘ h: I 1‘ JulileUll U1 Electronic circuits must operate at elevated temperatures for a variety of applications. Sometimes we must ensure that a circuit performs properly in an oven, a car engine, a turbine, or Death Valley during the summer. Consider A PN junction formed in a piece of Silicon. The n—type region is doped with a donor concentration of 1018 cm‘3, and the p-type region is doped with an acceptor concentration of, 1016 cm’3. Calculate the electron and hole concentrations on the p-side for operation at a temperature of 580 K. a , ~— jg I" / My 14.7 fl 1‘ ‘5 31:? fl _ i Z. t b; V -~ [If ’ [0:3th ficmwék’z jig/7k) 43¢ ' [14' ,1? 5 / @Jf/fl ‘ IK/ , 2 3,73 X «’0‘2/ CM”? . - / , , 1 ~ 3 V7; " £3.27“ x /0 (VP? / , ’1’ ” Z .. f1 _ 45,,,,_~$ 11-54%". , ’ ,,f I 2, 4‘34 x " ,1) r L” , n L»: .f / if“ 2 s ,2 13 V _ H" , ”9, .. 3 ?5X H3“ MM 5 14 / M‘ __... , fizz %7 1.)}.st 537??» 5’- a; it [gm/cry (4 points) (2 points) (2 points) J> P C) ints) 2. Diode Operation Given a diode with a saturation current of 20 fA that lets a current of 50 pA flow at 0.3 V forward bias at room temperature, determine the current that flows at 0.65 V forward bias. 10 I I5 L/Ckkfl/err) ] \4) A I” ”23%..--“ — /, .5” 5 5 77 V7 [7an 7*) M [10 20M In : 1525’? ($3?) 4] : ZOFfl/fl‘P/fs:;zwv) )] M 3 153* tr> : away 14 :1-3; 55> J; : p,’130/1/7 y j C“ "’B r "t :9 6?!!!i/dfl y? ”' / ” _,/ va , ‘ m 'I ~/> Ib :ltlmfl/gzr 29ml/ 1/7 3. Current Issues in Integrated Circuits A) Please define the term off current. p4] fl /:.g/ 7PH I5 (Milaneéf/VT 7/7/97 FLLWfi/j ; My , / , 4 g 2/. {rt/H E M L?” 4 L13.” 0/? 15;, V MAI/Mg, /rj/t’/r’&/V7 {Vt 779/5 /5 [fit/4 5/ L5” C 2/7 fi/fifl/ 7' B) Why is off current important? / Lgfltfléf [l/fx’fl’f/Z/ / amass/flflWf/lfi zit/2’9" 5W“ 371/555 C/é’zé/j/ F 0%} aflVflE SAW/54514? flaw/2973 4534/5 gag/@435 C) Cross out the appropriate words to make the sentence true: WithThe source of a NMOS-FET grounded, the drain at +2 V, and the JAktggeVP-type Silicon substrate grounded, the geckos/drain has a Wider depletion region surrounding it. 4. Diode Circuits For diodes, including breakdown diodes, use the constant voltage drop model with V0,, = 0.7 V, or use the more accurate diode law. Please sketch the output voltage when the input voltage is: Vs 9 J A) For the diode circuit shown to the right, please plot V0UTA- (4 points) V0 UTA le 100 k!) 1-..- J-.-— 1-.-- r-----*---- f ---1-" I | , “"“f‘7' L h I -.---1_____-._____ <.-.--.L.-.-. R_.L__---. l I -———-1——-——-L——_ I ,...-. L I ;\_P__-__J_-.._- _ . . . . L . _ . . _ _ 1 _ . . _ _ . ._____4____._L-.--- I _.____J._-_.— I ..|.______ --.._-J I ..__.__,_._._- 11 AU ms] [ Time B) For the diode circuit shown to the right, please plot VOUTB. (4 points) -LL1_LLJ 1"""r""""" 1--LJ__ 14 ------1------r- L . J L LI . J L _ _ 4| L n _ L _ ___-__.______L._... -LAJ1 {J -LLJ_L|._I_I_L -1- J.I. . ......,--..-. -l. J .l "74;!- 441$.»lu "mi: 32 -4._____ .; .-. ’_.__--J_- ._———4——.-._L-._-_ . Time [ms] 5. BJT Biasing (3 points) A) Please analyze the circuit shown and determine the Q-point of the transistor Q 1. [iv = 60, [3R = 0.2, VA = 100 V. I: :7 iv 3’ ’1 th/ [/6141 fil,’ /?l 201/ ,_ / , fiery”, :. /C’V ~ ”/7 r V55 " yer, 1Y7; *" [132 23 V ‘” ?§ 1’ — K 'lk’ m» )5 HM V0 I) g}; / I { 27 /‘ R3 00 k0 - - > ,c It : ,xs’p I5 ,. w B W!" J ram/g ' v w i flpfl Apr \I/(g I VICL‘ " «LL fl. l; [flit I; 6/ ~ /@ V ‘ (/flZiCu/SZYS, PKCQ) r. [(775549/596-77 [jg/L f. 9’; 8,2 ‘v/ . [fibril \’/£’: ; ]s[}é/ 2/ If, 3; we ' "’ VCC - E X”) ‘7 qu ¥ \/ Via / T577 : flay fi’fl All 27 (3 points) B) In what region is the transistor operating? 1) Cut—off 2) Forward Active 3) Saturation 4) Reverse Active 5) Breakdown 2 ’50”, [44 Z» (5 points) (4 points) 5. BJT Biasing (continued) C) Draw a small signal model of the amplifier circuit and determine the small-signal parameters for the BJT. K01; « l KB 51M ; . ; _,:“‘“7 = ’Mfl ”5 /’ L, 27 WV g— fly : LL— : 3—9“ . : , 1 I: V‘Ww (1m egjlzzmfi /§ J2 , / ~ 2 ~ , . V‘ ; L’éE:i: : iglek/Of/L : 9557/sz [a --:I:C 1.07gm/14' D) For vs(t) = 2 mV sin(1000 t), determine the output voltage, v0. Specify both C and AC components. ”/25 {ii/JG, lSi?WuL///_3}Aw/ _ 555‘}; 7% / ”(W/‘57P“) - /,26/a;+ m» ” ' § 7/ / “ '~ ” o \ .- , an 22”; 699%; F26 MSRJZ ”#6 Z W v» z ’ez/ww , 4 441/ / 5,9414 : ~/§/ 0 7/; www// ‘ 2 - , ng,%,V 5A7 magi“, \// I; CIL/ \ W—‘jfl— % , I 4”}? /"""" , 4!; r $163 I fig R9; 05??) “:63 972198 if" K; 6. MOSFET Biasing + 4.0V The circuit to the right contains two transistors With VITN— — - VTP — 0. 6 V, KN=1.,K8mA/V2 KP=1.0mA/V2,y= 0V1/22= 0V. VIN- 3.2V M1 (2 points) A) In what region of operation does transistor M1 operate? Prove it. VOUT VD; : Val 50 V05; 3 L45: > V1651“ V3- Vl‘ | M2 SD M; i5 fiflTVflflTEQJ 1,; 27"; m/ (8 points) B) Determine VOUT and the Q-points for transistors M1 and M 2. I f . .__ . - - "f" . 'F 5’ .- x’f‘ W9, M, .Srfi/ / ”7,2. 4/»! 504 w; F04” Vawr / C) ’7’“ ' ' a, )L ‘ ICV [QV— '4t17 _ fl,6l/)&; v%(§,+L/, Vé‘ff); p. h. ' \/I/ fl 2 ~ . KM . - / ,’ _ [1/05“] 2:2;[L/1/V’ [/ry) lbw? ibar] . ./ a g . / 7‘ 2.." ; [1"{1’2 (5,2 ’“ 01(2) VauT *1/06r7] : i’iz 5:2 Lw’f kiwi) 1 sou/E I :4: z/ \ Z _ ' — 5,3 0147 + "if? 9 7L! ~Lgf : (SW/48w) ’ ”‘Sré .A am I: Vi,” : ‘) w T L)» L) : /,205 if) M M ' \A : a1, —. Lima/:12 : 2 WV (9')! Up f} _: 7/3334 mfl /ZZ .' ‘V/pl 2: Liz/V J 3’2 L"; 50 YES) Li 1U 1/2251 5 VOW?” / 26” 1 KM »— ’ 17 1,92 1 } 2(5‘6 Lfl”))fl§ 1’75 87222232 8291208 2.21.787 11L, 5 ‘1'" WM} 1m : 5 [50/7 Vega?” 4' 4 2‘57 56 [’1 9-, FBI/”fl ...
View Full Document

{[ snackBarMessage ]}

What students are saying

  • Left Quote Icon

    As a current student on this bumpy collegiate pathway, I stumbled upon Course Hero, where I can find study resources for nearly all my courses, get online help from tutors 24/7, and even share my old projects, papers, and lecture notes with other students.

    Student Picture

    Kiran Temple University Fox School of Business ‘17, Course Hero Intern

  • Left Quote Icon

    I cannot even describe how much Course Hero helped me this summer. It’s truly become something I can always rely on and help me. In the end, I was not only able to survive summer classes, but I was able to thrive thanks to Course Hero.

    Student Picture

    Dana University of Pennsylvania ‘17, Course Hero Intern

  • Left Quote Icon

    The ability to access any university’s resources through Course Hero proved invaluable in my case. I was behind on Tulane coursework and actually used UCLA’s materials to help me move forward and get everything together on time.

    Student Picture

    Jill Tulane University ‘16, Course Hero Intern