11b - Topic. 4-, Bifaplm -—jmo‘trifin firm-sisters...

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Unformatted text preview: Topic. 4-, Bifaplm -—jmo‘trifin firm-sisters 4...] .- Transistor Construction 0.) The bipolar-junction transister censists of three layers of deped semiconductor material. to Twe cf the layers may be either N-ty'pe er P-type, and the third layer or the centre layer is the opposite of that type. c) The centre is less heavily draped than the twe enter layers. NPN Transistor PNP Transistor Emflter fl a - FA 3 n - Emflter I} Collector _ CO'IGCTOF Base Base at.) A transistor is a three terminal device; the two cuter layers cf the transistor are called the emitter (E) and the cellecter (C). The thin middle layer sandwiched between the emitter and the cellecter, is called the base (B). F Iii't'IlIUCIDI'J HILHfl-CUHCCIUE 31: m; H I J n Haw-Emitter function 15. turn lucr} F. {a} Basic Epitaxial planar stmutun: thJ up" [Cl PHI! Basic hip-aim tmnsiflur cansrmtrfnn. -— Trmsisfiw fijmbnfis L C 56;} 5%. E E {-9.} I'an Lb) PH‘P Tim Mrm if“ nipoflw FJ‘Mc/‘tt‘rn translstw Siju-L gnakcaizs: 31) 15L; mrespwofh‘tj tumnd 1‘5. 131;: amlfiwj b) t4; dfireoflm as {W 13-53 “mm in; #161;ch Mama. ' Farurwdfl fewer“. bfas 03' a. "Dr-marqu ta) Fm- bptk It?" and PH? firm-Islam; A5 an MTV-f1”; tin baie— amide; ) ‘w utfm urn/ml " biased 0! 15h base—Mug”? L55) #uflfifititfih Shtmld be reVMse- W bl‘ased. [in T19. turnifms I73 til Wrfifltfi fin BIT: ME Shown. in W Mums mbnua, U53 emitter Carma-wt IE {5 {CL—u 5m 0?- tflfi Murcia? a“er Ir. who! {Lu but. mired: 15, La, IE =15+l¢ _ ' DChpMametws Lfi tit transu'sbn fix — wrath v? {$2.0- dc. “(factor nil-HT?er In. tom dc. base current 15 , LE. , lc {31015: Is it PM '55 15% d5 LMrea-v‘t 5min «f afimsistw_ ** apical values cf (3“, range from Less than 10 to in? arr Maker. flit" 0h VMsfibn shuts, (39:. {5 LL5ka designated n.5, M1 2%HFU‘almt hjbh‘al pawl-met" hFE, LE» hFE = (luc_ GLIDE '—" T11. rattle MI,- tLg at: codeotav awrmt I; 159 H W dc. amid“ 641$th IE, LE. , — —— __ 1* Tjfi‘d Ham 4 021}; rang; JLrpm aflftpafifi ‘1" gram, but due.“ , . IE I +I 5mm. : L B : “FE—EL- w‘E have I: It, I: | I + I aim. '- F‘nc. cl fl‘“ ' firm: In 4’5 4. Each-1915:: I3me fin: , Mat 01px;, :Fmr a. trflnst'sde when. I5=SDM AMA l¢=3.5.§HAI -. I . SDMIW: {3 I c = _ m In. S’DJLA '— I5 = Inflg 7— 3J$MA +30%}! = 3.79 MA I: 3 $5M“ : : .--II-—'—"—'—:flq36 5L“ IE 3.79M aim. {39¢ __ T3 = “3%” $57271; :“Me 01mm: TE 0336 IDMA : NMA + S‘DJJA : fl'qq‘g 4—6 .1 ' aura-mt and Voltage fleF'IAJ/asl‘fi CoHSIiw m Ibasr‘c tungsten bq‘ag Mom} MW and fiiSH-‘HE (3:3; 1:5 Knfiwn. my; W d5. PIP-WW!) am hi {Mtiffid‘ In. : dc. base Luxth IE : all: miiiw cmrwt IE. .2 (it. Muflfltfl' fiWV-mt V32: 0L: WLtaje mt base with map-wt to amt“ Vcfi : dc. Voltage out mum” mi,er aspect to base Va; : alt: thaje out Lumbar With respaot £0 Emitter Sing: V53 ,J—uyurmd'blafifii dfi bMefm:tt~EI-¥ jug-10th“, “LL; fwumolv-bt‘ased BE hat-5 flu humid fwnrmol Voltage. alto? 4 V2.5 i of?” ( far Silim 531v) Swing, alarming Kmhhpfi’s voltage Law to Laura :1 ...
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11b - Topic. 4-, Bifaplm -—jmo‘trifin firm-sisters...

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