2_1_class 10 slides - EE2 Fall 2007 Class 10 slides 1...

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1 EE2 Fall 2007 Class 10 slides
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2 Outline 1. Review of last class 2. Carrier densities in non-degenerate semiconductors 3. Ionization of impurity atoms (p60 in the course reader) 4. Temperature variation of carrier densities(p62) 5. Location of Fermi energy in the band gap(p64) 6. Carrier densities and E F in terms of E i (p67) 7. Initial discussion of current flow in semiconductors (p70)
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3 Class 10 slides Review of previous class: Ionized impurity density equals density of majority carriers In non-degenerate semiconductors E F lies in the energy band gap at least 3kT below the conduction band minimum E c (called conduction band edge) in n-type semiconductors and at least 3kT above the top of the valence band maximum E v (called valence band edge). The expression for thermal equilibrium electron and hold densities in non-degenerate semiconductors is the same as what we obtained in intrinsic semiconductors. Law of mass action is valid in non-degenerate semiconductors. The carrier densities in intrinsic material are different from those in extrinsic material because the Fermi energy is located at a different level in the band gap from where it is located in the intrinsic material
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