NE68833

NE68833 - NONLINEAR MODEL Q1 LCX LBX Base LB CCE Collector...

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Unformatted text preview: NONLINEAR MODEL Q1 LCX LBX Base LB CCE Collector NE68833 SCHEMATIC CCBPKG CCB CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 3.8e-16 135.7 1 28 0.6 3.8e-15 1.49 12.3 1.1 3.5 0.06 3.5e-16 1.62 0.4 6.14 3.5 0.001 4.2 0.796e-12 0.71 0.38 0.549e-12 0.65 PARAMETERS (1) Q1 0.48 0.56 0 0.75 0 0.75 11e-12 0.36 0.65 0.61 50 32e-12 1.11 0 3 1.5e-14 1.22 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF ADDITIONAL PARAMETERS Parameters CCB CCE LB LE CCBPKG CCEPKG CBEPKG LBX LCX LEX 68833 0.24e-12 0.27e-12 0.77e-9 0.95e-9 0.15e-12 0.1e-12 0.1e-12 0.3e-9 0.4e-9 0.3e-9 MODEL RANGE Frequency: 0.05 to 5.0 GHz Bias: VCE = 1 V to 5 V, IC = 1 mA to 10 mA Date: 8/03 (1) Gummel-Poon Model Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 08/04/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd. SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES • ALSO AVAILABLE IN CHIP FORM 18 (SOT 343 STYLE) NE688 SERIES 19 (3 PIN ULTRA SUPER MINI MOLD) s ber m T E : a rt n u e n o t NO g p ar gn. E i EAS lowin sheet w des PL a fol da t f o r n e i c e f o r e T h CHARACTERISTICS e d ELECTRICAL this nd off m s fro mme ale ll s co a re e c s lea ls: P i eta 818 d E 6 8 39 N 688 9R NE 883 NE6 NEC's NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688's low phase noise distortion and high fT make it an excellent choice for oscillator applications up to 5 GHz. The NE688 series is available in six different low cost plastic surface mount package styles, and in chip form. 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) (TA = 25°C) PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68818 2SC5194 18 NE68819 2SC5195 19 NE68830 2SC5193 30 NE68833 2SC5191 33 fT fT NFMIN NFMIN |S21E|2 |S21E|2 hFE ICBO IEBO CRE4 PT RTH(J-A) Gain Bandwidth Product at VCE = 1V, IC = 3 mA, f = 2.0 GHz Gain Bandwidth Product at VCE = 3V, IC = 20 mA, f = 2.0 GHz Minimum Noise Figure at VCE = 1 V, I C = 3 mA, f = 2.0 GHz Minimum Noise Figure at VCE = 3 V, I C = 7 mA, f = 2.0 GHz Insertion Power Gain at VCE = 1V, IC = 3 mA, f = 2.0 GHz Insertion Power Gain at VCE = 3V, IC = 20 mA, f = 2.0 GHz Forward Current Gain3 at VCE = 1 V, I C = 3 mA Collector Cutoff Current at VCB = 5 V, IE = 0 mA Emitter Cutoff Current at VEB = 1 V, IC = 0 mA Feedback Capacitance at VCB = 1 V, I E = 0 mA, f = 1 MHz Total Power Dissipation Thermal Resistance (Junction to Ambient) GHz 4 5 4.5 5 4 4.5 9 4 4.5 4 4.5 9 GHz dB 10 9.5 8.5 1.7 2.5 1.7 2.5 1.7 2.5 1.7 2.5 1.7 dB 1.5 1.5 1.5 1.5 1.5 dB 3.0 4.0 3.0 4.0 8 2.5 3.5 2.5 3.5 4.0 4.5 9 dB 8.5 6.5 6.5 80 160 80 160 80 160 80 160 80 nA nA pF mW °C/W 100 100 0.65 0.8 150 833 0.7 100 100 0.8 125 1000 100 100 0.75 0.85 150 833 100 100 0.75 0.85 200 625 DESCRIPTION NE68839/39R 2SC5192/92R 39 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX 2.5 160 100 100 0.65 0.8 200 625 RTH(J-C) Thermal Resistance(Junction to Case) °C/W Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures. 2. Electronic Industrial Association of Japan. 3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%. 4. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. California Eastern Laboratories NE688 SERIES ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Operating Junction Temperature Storage Temperature UNITS V V V mA °C °C RATINGS 9 6 2.0 100 150 -65 to +150 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) NE68818, NE68830 D.C. POWER DERATING CURVE 200 150 NE68819 D.C. POWER DERATING CURVE Free Air Total Power Dissipation, PT (mW) Free Air Total Power Dissipation, PT (mW) 100 100 50 0 0 50 100 150 0 0 50 100 150 Ambient Temperature TA (°C) Ambient Temperature TA (°C) NE68833, NE68839 D.C. POWER DERATING CURVE 30 Free Air COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 200 µA 25 Total Power Dissipation, PT (mW) 200 Collector Current, IC (mA) 180 µA 160 µA 20 140 µA 120 µA 15 100 µA 80 µA 60 µA 100 10 5 40 µA IB = 20 µA 0 0 50 100 150 0 0 2.5 5 7 Ambient Temperature TA (°C) Collector to Emitter Voltage, VCE (V) NE688 SERIES TYPICAL PERFORMANCE CURVES (TA = 25°C) NE68833 INSERTION GAIN vs. COLLECTOR CURRENT 8 f = 2 GHz VCE = 3 V NE68833 NOISE FIGURE vs. COLLECTOR CURRENT 5 f = 2 GHz 4 Insertion Power Gain, |S21e|2 (dB) 6 VCE = 1 V Noise Figure, NF (dB) 3 4 VCE = 3 V 2 2 1 VCE = 1 V 0 1 2 5 10 20 50 100 0 1 2 5 10 20 50 100 Collector Current, IC (mA) Collector Current, IC (mA) D.C. CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 1 V NE68839 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 f = 2 GHz Gain Bandwidth Product, fT (GHz) VCE = 3 V 8 VCE = 1 V 6 DC Current Gain, hFE 100 4 2 0 0.1 0.2 0.5 1 2 5 10 20 50 100 0 1 2 5 10 20 50 100 Collector Current, IC (mA) Collector Current, IC (mA) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 50 VCE = 1 V NE68830 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1 MHz Collector Current, IC (mA) 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 Feed-back Capacitance, CRE (pF) 1 1.0 0.5 0.1 0 0.5 1 5 10 20 Base to Emitter Voltage, VBE (V) Collector to Base Voltage, VCB (V) NE688 SERIES TYPICAL SCATTERING PARAMETERS (TA = 25°C) .8 .6 .4 1 90˚ 1.5 2 135˚ S22 5 GHz 3 4 5 10 20 .8 1 1.5 2 3 4 5 10 20 45˚ .2 S11 5 GHz 0 .2 .4 .6 S22 0.1 GHz -.2 -3 -.4 -2 -.6 -.8 -1 -1.5 S21 180˚ 5 GHz -20 -10 -5 -4 S12 0.1 GHz S12 5 GHz .25 .50 0˚ S21 0.1 GHz S11 0.1 GHz 1 Coordinates in Ohms Frequency in GHz (VCE = 0.5 V, IC = 0.5 mA) 225˚ 270˚ 315˚ NE68833 VCE = 0.5 V, IC = 0.5 mA FREQUENCY GHz 0.1 0.4 0.8 1.0 1.5 2.0 2.5 3.0 MAG 0.971 0.877 0.723 0.683 0.640 0.644 0.669 0.682 S11 ANG -15.100 -59.900 -105.400 -122.900 -158.100 174.400 151.300 131.300 S21 MAG ANG 1.775 164.000 1.588 127.800 1.237 90.500 1.101 76.900 0.871 51.800 0.717 35.000 0.612 25.500 0.544 22.100 MAG 0.065 0.215 0.295 0.303 0.265 0.199 0.171 0.243 S12 ANG 79.000 50.900 25.300 16.500 2.900 3.900 27.800 47.700 MAG 0.989 0.883 0.729 0.682 0.609 0.584 0.578 0.580 S22 ANG -8.700 -30.200 -48.600 -55.300 -71.400 -88.400 -107.300 -126.900 K 0.117 0.261 0.491 0.581 0.824 1.167 1.428 1.244 MAG1 (dB) 14.363 8.684 6.225 5.603 5.168 3.092 1.649 0.525 VCE = 1.0 V, IC = 1.0 mA 0.1 0.4 0.8 1.0 1.5 2.0 2.5 3.0 4.0 5.0 0.960 0.821 0.650 0.602 0.555 0.556 0.576 0.592 0.618 0.626 -16.300 -66.100 -112.800 -130.600 -165.100 168.200 146.900 128.400 98.100 75.400 3.468 2.890 2.090 1.803 1.360 1.106 0.938 0.826 0.724 0.700 165.600 128.500 95.600 83.800 61.400 44.800 32.500 24.000 13.600 4.000 0.051 0.163 0.215 0.219 0.203 0.190 0.215 0.282 0.459 0.593 78.200 51.000 30.000 24.200 20.000 28.300 41.900 48.500 40.800 24.000 0.983 0.835 0.649 0.592 0.508 0.474 0.464 0.468 0.483 0.500 -9.800 -33.200 -50.700 -56.500 -69.500 -83.200 -99.100 -116.200 -151.100 174.500 0.098 0.235 0.459 0.571 0.865 1.122 1.162 1.068 0.968 0.990 18.325 12.487 9.877 9.156 8.260 5.529 3.959 3.074 1.979 0.720 VCE = 1.0 V, IC = 3.0 mA 0.1 0.4 0.8 1.0 1.5 2.0 2.5 3.0 4.0 5.0 0.877 0.607 0.462 0.437 0.423 0.437 0.461 0.481 0.523 0.571 -28.400 -94.900 -141.800 -157.700 173.800 152.600 136.300 121.800 98.200 78.400 9.241 5.850 3.462 2.859 2.032 1.616 1.361 1.197 1.005 0.882 157.900 113.900 87.200 78.500 61.200 47.500 35.700 26.300 10.500 -2.600 0.048 0.122 0.154 0.166 0.202 0.246 0.299 0.356 0.473 0.566 73.200 46.800 40.500 40.900 43.700 45.300 44.700 42.000 32.300 19.400 0.937 0.599 0.382 0.331 0.265 0.239 0.237 0.250 0.294 0.349 -19.300 -53.600 -70.400 -75.500 -87.200 -100.400 -115.600 -131.300 -162.400 167.000 0.128 0.411 0.731 0.853 1.029 1.079 1.062 1.033 0.981 0.974 22.845 16.808 13.518 12.361 8.987 6.461 5.066 4.151 3.273 1.927 VCE = 3.0 V, IC = 3.0 mA 0.1 0.4 0.8 1.0 1.5 2.0 2.5 3.0 4.0 5.0 0.892 0.629 0.446 0.409 0.379 0.389 0.410 0.432 0.484 0.533 -23.800 -83.800 -129.900 -146.800 -178.400 158.300 140.300 125.000 100.300 79.800 9.321 6.328 3.868 3.204 2.277 1.797 1.507 1.315 1.087 0.947 160.400 118.600 91.300 82.400 65.100 51.400 39.500 29.800 13.600 -0.100 0.037 0.102 0.133 0.144 0.177 0.218 0.270 0.327 0.449 0.558 75.000 51.000 44.500 44.900 48.200 50.600 50.800 48.500 39.400 26.400 0.954 0.666 0.454 0.403 0.336 0.305 0.293 0.293 0.310 0.342 -15.000 -42.700 -55.000 -58.200 -65.900 -75.600 -88.100 -102.600 -134.200 -168.400 0.137 0.399 0.719 0.841 1.017 1.066 1.043 1.009 0.945 0.939 24.013 17.927 14.636 13.473 10.300 7.588 6.192 5.474 3.840 2.297 See notes on previous page. NE688 SERIES TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE68833 VCE = 3.0 V, IC = 7.0 mA FREQUENCY GHz 0.1 0.4 0.8 1.0 1.5 2.0 2.5 3.0 4.0 5.0 MAG 0.738 0.422 0.317 0.304 0.302 0.317 0.342 0.358 0.406 0.471 S11 ANG -38.900 -108.100 -152.000 -166.400 168.000 148.300 133.600 121.600 101.800 83.500 MAG 17.561 8.799 4.793 3.908 2.707 2.120 1.769 1.541 1.282 1.117 S21 ANG 148.600 106.000 85.000 78.000 64.000 52.100 41.800 32.300 16.200 1.100 MAG 0.035 0.078 0.119 0.140 0.196 0.254 0.311 0.368 0.471 0.557 S12 ANG 72.200 55.800 58.000 58.700 57.900 55.100 50.900 45.900 34.800 22.300 MAG 0.874 0.453 0.283 0.248 0.202 0.180 0.173 0.177 0.204 0.252 S22 ANG -25.500 -55.900 -63.900 -66.300 -74.100 -84.800 -99.100 -115.100 -148.600 175.600 K 0.226 0.661 0.921 0.978 1.033 1.036 1.022 1.008 0.976 0.964 MAG1 (dB) 27.005 20.523 16.051 14.458 10.291 8.051 6.632 5.662 4.349 3.022 VCE = 3.0 V, IC = 20 mA 0.1 0.4 0.8 1.0 1.5 2.0 2.5 3.0 4.0 5.0 0.479 0.276 0.252 0.251 0.265 0.289 0.313 0.332 0.378 0.445 -65.600 -141.300 -176.800 171.500 151.700 136.500 124.100 113.100 96.000 80.700 29.593 10.351 5.382 4.352 2.993 2.324 1.932 1.678 1.384 1.201 133.500 95.700 80.200 74.600 62.700 52.200 42.400 33.800 17.900 3.100 0.026 0.066 0.119 0.146 0.212 0.275 0.335 0.390 0.486 0.556 65.900 67.400 68.300 67.100 62.500 56.900 50.800 44.500 32.000 19.400 0.692 0.266 0.165 0.146 0.121 0.110 0.114 0.130 0.175 0.231 -41.600 -67.200 -73.600 -77.100 -88.700 -104.300 -122.300 -139.600 -170.800 160.200 0.448 0.898 0.999 1.014 1.024 1.021 1.012 1.007 0.992 0.983 30.562 21.954 16.554 14.006 10.543 8.387 6.930 5.840 4.545 3.345 VCE = 5.0 V, IC = 10 mA 0.1 0.4 0.8 1.0 1.5 2.0 2.5 3.0 4.0 5.0 Note: 1.Gain Calculations: MAG = |S21| |S12| 0.686 0.356 0.271 0.262 0.266 0.285 0.312 0.332 0.381 0.449 -44.200 -115.200 -158.000 -172.200 161.900 143.600 129.300 117.100 97.900 81.900 22.023 9.698 5.191 4.212 2.912 2.269 1.886 1.639 1.351 1.175 145.500 102.500 83.500 77.100 64.000 52.800 42.600 33.700 17.500 2.500 0.030 0.071 0.116 0.139 0.199 0.258 0.316 0.370 0.469 0.548 67.500 59.600 62.500 62.400 60.200 56.100 51.300 45.800 34.200 22.000 0.828 0.390 0.246 0.217 0.178 0.158 0.153 0.158 0.187 0.230 -29.500 -57.900 -64.000 -66.100 -73.800 -84.900 -99.700 -116.500 -150.600 176.200 0.293 0.756 0.958 0.997 1.028 1.029 1.017 1.008 0.986 0.970 28.658 21.354 16.508 14.815 10.631 8.398 6.962 5.901 4.595 3.313 (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE688 SERIES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 18 (SOT-343) 2.1 ± 0.2 1.25 ± 0.1 +0.10 0.3 -0.05 (LEADS 2, 3, 4) OUTLINE 18 RECOMMENDED P.C.B. LAYOUT 0.8 2 3 0.6 2.0 ± 0.2 0.65 2 3 0.65 1.3 0.60 0.65 1 +0.10 0.4 -0.05 0.3 4 0.9 ± 0.1 LEAD CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter +0.10 0.15 -0.05 1.25 1 1.7 0 to 0.1 4 PACKAGE OUTLINE 19 1.6 ± 0.1 0.8 ± 0.1 2 OUTLINE 19 RECOMMENDED P.C.B. LAYOUT 1.3 1.6 ± 0.1 1.0 0.5 +0.1 0.2 - 0 1 3 +0.10 0.3 -0.05 LEAD 3 ONLY 2 3 1.0 LEAD CONNECTIONS 1. Emitter 2. Base 3. Collector 0.75 ± 0.05 0.6 +0.1 0.15 -0.05 0.5 0.6 1 0.6 0 to 0.1 PACKAGE OUTLINE 30 (SOT-323) 2.1 ± 0.2 1.25 ± 0.1 OUTLINE 30 RECOMMENDED P.C.B. LAYOUT 1.7 2.0 ± 0.2 1.3 3 0.65 2 +0.1 0.3 -0.05 (ALL LEADS) 2 3 1 MARKING 1.3 0.65 0.6 1 0.8 0.15 0.9 ± 0.1 LEAD CONNECTIONS 1. Emitter 2. Base 3. Collector +0.10 0.15 -0.05 0 to 0.1 PACKAGE OUTLINE 33 (SOT-23) +0.2 2.8 -0.3 OUTLINE 33 RECOMMENDED P.C.B. LAYOUT 2.4 2.9 ± 0.2 0.95 1.9 2 +0.10 0.4 -0.05 (ALL LEADS) 2 3 3 1.9 1 +0.2 1.5 -0.1 +0.10 0.65 -0.15 1.1 to 1.4 0.8 LEAD CONNECTIONS 1. Emitter 2. Base 3. Collector 0.95 0.8 1 1.0 0 to 0.1 +0.10 0.16 -0.06 ...
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