Midterm1AF05

Midterm1AF05 - EE 307A F05 MIDTERM EXAM #1 Braun CLOSED...

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Unformatted text preview: EE 307A F05 MIDTERM EXAM #1 Braun CLOSED BOOK + 1 Cheat Sheet Part 1 10 Points) State assumptions and show work. * . Part2 17 Points) _ (1 point) Print Your Name: A Efifl li/V Part 3 (12 Points) — Total (41 Points) — No unauthorized help given or received. I will not discuss this exam with another student until after noon today. (1 point) Signature: 55%” / / fl/fls Unless stated otherwise, please use the following transistor parameters for ALL problems: Vm= — V” = 0.80 V, kN’/2 = 40 uA/VZ, kp’/2 = 20 uA/VZ, ,1 = o v", —2¢F= 0.6 V, and y = 0.0 v”? Assume that body connections of all NMOS transistors are grounded and PMOS bodies go to +VDD. 1. Load-line analysis of NMOS inverter with resistor load The NMOS-FET in the inverter has the current vs. voltage characteristics shown below, instead of those we’ve studied in class. Since you don’t have the equations that describe the characteristics, use a load-line analysis. Figure from Woo Young Choi, Jae Young Song, Jong Duk Lee, Young June Park, and Byung— Gook Park , A Novel Biasing Scheme for I—MOS (Impact-Ionization MOS) Devices, IEEE TRANSACTIONS ONNANOTECHNOLOGY, VOL. 4, N0. 3, MAY 2005, pp. 322-325. as ‘7‘ 9.2 as we as m L rain: wattage (2 points) A) On the plot of drain characteristics, draw the load line for RL = 2 k9. WA? m 3 05am?” (mints) B) “will?” may; am 4% 7% 1425 :W Cum/f / my; W, 3 1/” v 22,41 : y” v@M/);fi;}/gy;/l/: 2.5,, :/l/ (“WI/g /¢fl/V£ :(QJZV—Zflfl’a/ (4 points) 'C) Determine the value of VOL. Explain. mm1 My : VM : l5» 3”» 2mm wry/(gm 77% A”; r 2/” Amy 4%; W LQL EE 307A F05 ‘ 2. NMOS inverter. CL = 20 pF. V7w = — VTP = 0.80 V, k1 = 100.0 uA/VZ, k2 = 10.0 uA/V2,/1 = 0 v1, -2¢F = 0.6 V, and y = 0.0 v1”. Assume that body connections of all NMOS transistors are grounded and PMOS bodies go to +VDD. VDD = V (3 points) A) Determine the value of VOH WNW H, 19F; ‘ Vow 5 VI? ‘ V); 3 Sponang: 94,201/ V 2” “0"”1 50 w fivfly £FF£67 max/r5 aw ’ VIN—_| 1 CL V (4 Points) B) Determine the value of gate switching voltage, VM, WIT” MM:MW7’:2/q : #V/I’fflES/gg M, w/%_ 5&7— 557' L > I1. 50w; warn/,4 2 I) : Kill/w, wwf ohm/44y) i z 3 I). I A’zfl/wz ~Vw)z=*1[Vup 447‘ Km) fiwao a qu"76Vm amp? 2 K}, mam : w@\}%2+%2//IZ? V - V a W)”; 5’57 vim:ng V” 2-9 ‘ 2-7 ” M2 y / (4 points) C) Determine the total power dissipation in the inverter, when Vow = 2.00 V.‘ W/TH- Mam : 20914 M2 15 547 Z I} 2 k2- [iép' l/evuf‘ifiV) ~ mag/gmamy—aflaz‘ 7/ / Z: : Paar; : \éfl',12:[WJ/Héfl)/L : Smyré’gfixf I 7292.0/411/ (6 points) D) Compared with tng for the gate as specified above, determine the influence on the value of tpHL of Checkaroriate boxes Iv ‘3 I; ~ 3: , r), :5 94%;», . ¥ - the same Information I. -- I. EE 307A F05 3. Dynamic and Static CMOS. Vm= - V7,, = 0.8 V. liaig (2 points) A) Draw the circuit diagram of the static CMOS implementation of the dynamic CMOS gate shown to the right. i“ v V p VOUT 4 V4: ‘4/1/ g’Lfl/W c1). V I K (1 point) B) Write a correct Bbolean expression for VOUT= V; (2 points) C) The table below shows scope traces for (I) and VOUT at three different frequencies. Enter plausible values for signal VA in the blanks on the top row of each column in the table. VA = 57/ V (fill in blank) Frequency F1 N [1.4 e 5 § 5-4 [1.4 Frequency F3 (4 points) C) Rank the frequencies F1, F2, and F3 from lowest to highest. Circle the correct ranking. 1.F1<F2<F3 3.F2<F1<F3 5.F3<F1<F2 Expli£1<F3<Fz 4-1:;FKFI 2?; ,“g/ )( #8 €V4/V‘UJ8 5f p c/flck q 2) .6ny If; 45 w ' A4 wqficmif 4126/ L90 w/% 457% 7% éyfl 9W [3,) m/ 1/0”, 17/51 W5 yap 52014 >19 pérfi/r/M flan/a? %0 J/flW E; (3 points) D) Clearly indicate by circling the scope traces above any time(s) an frequencies during which VOUT produces the desired values. Places “X”s on the time(s) and frequencies during which VOUT produces invalid logic levels. ...
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This note was uploaded on 06/01/2008 for the course EE 307 taught by Professor Braun during the Spring '08 term at Cal Poly.

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Midterm1AF05 - EE 307A F05 MIDTERM EXAM #1 Braun CLOSED...

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