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Midterm1AF05

# Midterm1AF05 - EE 307A F05 MIDTERM EXAM#1 Braun CLOSED BOOK...

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Unformatted text preview: EE 307A F05 MIDTERM EXAM #1 Braun CLOSED BOOK + 1 Cheat Sheet Part 1 10 Points) State assumptions and show work. * . Part2 17 Points) _ (1 point) Print Your Name: A Eﬁﬂ li/V Part 3 (12 Points) — Total (41 Points) — No unauthorized help given or received. I will not discuss this exam with another student until after noon today. (1 point) Signature: 55%” / / ﬂ/ﬂs Unless stated otherwise, please use the following transistor parameters for ALL problems: Vm= — V” = 0.80 V, kN’/2 = 40 uA/VZ, kp’/2 = 20 uA/VZ, ,1 = o v", —2¢F= 0.6 V, and y = 0.0 v”? Assume that body connections of all NMOS transistors are grounded and PMOS bodies go to +VDD. 1. Load-line analysis of NMOS inverter with resistor load The NMOS-FET in the inverter has the current vs. voltage characteristics shown below, instead of those we’ve studied in class. Since you don’t have the equations that describe the characteristics, use a load-line analysis. Figure from Woo Young Choi, Jae Young Song, Jong Duk Lee, Young June Park, and Byung— Gook Park , A Novel Biasing Scheme for I—MOS (Impact-Ionization MOS) Devices, IEEE TRANSACTIONS ONNANOTECHNOLOGY, VOL. 4, N0. 3, MAY 2005, pp. 322-325. as ‘7‘ 9.2 as we as m L rain: wattage (2 points) A) On the plot of drain characteristics, draw the load line for RL = 2 k9. WA? m 3 05am?” (mints) B) “will?” may; am 4% 7% 1425 :W Cum/f / my; W, 3 1/” v 22,41 : y” [email protected]/);ﬁ;}/gy;/l/: 2.5,, :/l/ (“WI/g /¢ﬂ/V£ :(QJZV—Zﬂﬂ’a/ (4 points) 'C) Determine the value of VOL. Explain. mm1 My : VM : l5» 3”» 2mm wry/(gm 77% A”; r 2/” Amy 4%; W LQL EE 307A F05 ‘ 2. NMOS inverter. CL = 20 pF. V7w = — VTP = 0.80 V, k1 = 100.0 uA/VZ, k2 = 10.0 uA/V2,/1 = 0 v1, -2¢F = 0.6 V, and y = 0.0 v1”. Assume that body connections of all NMOS transistors are grounded and PMOS bodies go to +VDD. VDD = V (3 points) A) Determine the value of VOH WNW H, 19F; ‘ Vow 5 VI? ‘ V); 3 Sponang: 94,201/ V 2” “0"”1 50 w ﬁvﬂy £FF£67 max/r5 aw ’ VIN—_| 1 CL V (4 Points) B) Determine the value of gate switching voltage, VM, WIT” MM:MW7’:2/q : #V/I’fﬂES/gg M, w/%_ 5&7— 557' L > I1. 50w; warn/,4 2 I) : Kill/w, wwf ohm/44y) i z 3 I). I A’zﬂ/wz ~Vw)z=*1[Vup 447‘ Km) ﬁwao a qu"76Vm amp? 2 K}, mam : [email protected]\}%2+%2//IZ? V - V a W)”; 5’57 vim:ng V” 2-9 ‘ 2-7 ” M2 y / (4 points) C) Determine the total power dissipation in the inverter, when Vow = 2.00 V.‘ W/TH- Mam : 20914 M2 15 547 Z I} 2 k2- [iép' l/evuf‘iﬁV) ~ mag/gmamy—aﬂaz‘ 7/ / Z: : Paar; : \éﬂ',12:[WJ/Héﬂ)/L : Smyré’gﬁxf I 7292.0/411/ (6 points) D) Compared with tng for the gate as speciﬁed above, determine the inﬂuence on the value of tpHL of Checkaroriate boxes Iv ‘3 I; ~ 3: , r), :5 94%;», . ¥ - the same Information I. -- I. EE 307A F05 3. Dynamic and Static CMOS. Vm= - V7,, = 0.8 V. liaig (2 points) A) Draw the circuit diagram of the static CMOS implementation of the dynamic CMOS gate shown to the right. i“ v V p VOUT 4 V4: ‘4/1/ g’Lﬂ/W c1). V I K (1 point) B) Write a correct Bbolean expression for VOUT= V; (2 points) C) The table below shows scope traces for (I) and VOUT at three different frequencies. Enter plausible values for signal VA in the blanks on the top row of each column in the table. VA = 57/ V (ﬁll in blank) Frequency F1 N [1.4 e 5 § 5-4 [1.4 Frequency F3 (4 points) C) Rank the frequencies F1, F2, and F3 from lowest to highest. Circle the correct ranking. 1.F1<F2<F3 3.F2<F1<F3 5.F3<F1<F2 Expli£1<F3<Fz 4-1:;FKFI 2?; ,“g/ )( #8 €V4/V‘UJ8 5f p c/ﬂck q 2) .6ny If; 45 w ' A4 wqficmif 4126/ L90 w/% 457% 7% éyﬂ 9W [3,) m/ 1/0”, 17/51 W5 yap 52014 >19 pérﬁ/r/M ﬂan/a? %0 J/ﬂW E; (3 points) D) Clearly indicate by circling the scope traces above any time(s) an frequencies during which VOUT produces the desired values. Places “X”s on the time(s) and frequencies during which VOUT produces invalid logic levels. ...
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Midterm1AF05 - EE 307A F05 MIDTERM EXAM#1 Braun CLOSED BOOK...

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