Midterm1AS07

Midterm1AS07 - EE 307A 807 MIDTERM EXAM#1 Braun CLOSED BOOK...

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Unformatted text preview: EE 307A 807 MIDTERM EXAM #1 Braun CLOSED BOOK + 1 Cheat Sheet State assumptions and show work. Part 1 (10 Points) v Part 2 (18 Points) (1 point) Print Your Name: ; liaAM / /é%5 Part 3 (12 Points) Total (42 Points) No unauthorized help given or received. I will not discuss this exam with another student until after 4:00 today. (1 point) Signature: Unless stated otherwise, please use the following transistor parameters for ALL problems: VTN= — VTP = 0.8 v, /t = 0 v", -2¢F= 0.6 v, and y = 0.0 v”? Assume that body connections of all NMOS transistors are grounded and PMOS bodies go to +VDD. 1. NMOS inverter with several loads VDDZ 5 V k”, = 100 uA/VZ, km = 20 uA/Vz, kg = 50 uA/VZ, MP N2 g RL H—l a; . . h I f 30 k0 (5 pomts) A) Determinet e va ue o VOH. VIN l T VOW WW In W: 2% Wm M MN] “7 fit? [gflfl [i W K??? - ~ / fi/AL L04 [4547 70 M’V'ZW’EL (5 points) B) Please write and number, but do not solve, enough equations to determine VOL. Do explain decisions used to select your equation(s). Provide numerical values for all known quantities that appear in your equations. List names of any unknown variables here: 7.49 ‘59,) .73 l i 1 l E E l i i l \/ : Vazl/op 3 I‘m L/IV (W54VW‘WJ : n L i w a [7,, OFF (V56-=OV) 5?” ZZZ/$23. ml; 947' (%;5 ;)/y5) M42 ’ H 0 [f ; 30b7, 0 17M :if+f”} *1“ vL~sv . 2 W I x / Iv; 3 ffl/[QLVw‘l/flaw'léj Lgflv‘dflg” W :zflrfl/ EE 307A 807 VT”: — VTP = 0.8 V, A = 0 V", —2¢F= 0.6 V, and y = 0.0 VH2. Assume that body connections of all NMOS transistors are grounded and PMOS bodies go to +VDD. 2. NMOS inverter with several loads (cont’d) km = 100 uA/VZ, km = 20 uA/VZ, kp = 50 uA/Vz, Please use the same values as in problem 1 (repeated above) In this problem, the inverter drives a 20 pF load capacitance. t— VIN If 7 La V our (14 points) A) Using the same technique discussed during class to estimate tPLH and tpHL, ~51) _._CL (4 points) estimate how long it would take Vow to drop from 4.0 V at time t1 to 2.0 V at time t; after Vm rises from 0 V to 5 V instantly at time to < t,. Stated otherwise: find the time At = t2 — t1. — #719525 v,”st l/Wrzflg x7”; UK/ 400;; fly} fifl?‘ A Unarl/mrb 5W-W .1 18L —- g, -' gab} — 333/4! L- 1N2 1 Ma [1/90 «VM ‘ W1: 29/13/14 51/- way, 5:9 , 05/”? fl, : King—204v ‘ ‘4'MJV0'W'MXYEZI /flfl§% éZs/z/«QXl/Jfiél/{é‘wf/J /, #ém/i 0 “‘ v ‘2}! "fi’L/2“Jfl’ b I /¥éwfl—i53afl~z2§/a¢ : Muzémfl F I if " ‘ 3.2V, m 4/1/ /% #7 £42) My ’ 51/ W MA/z 5/517 ., Vflp" W7 _ SVvZV : flfl/{fl : gag/£5152 degtyl; 75,5)% 2. _ - / —I/ K442 [Vfly I’M 77/) my:/fl%:{[2/;Vflgy)r2yflbgl/;/2§vfl I”). I I/w : A74 [Z/W'IMVéW~ 0 v“ L 5/ ’ ’ fl} KL ,. ,, fl 15w : fill/witty] : JAM“! ( At’ t 4“ a a AV - gzv/Mwav) ; 235,75 I } I 5W ’ A‘Mfi’w/F’ B) Compared with the correct answer to part A, determine the influence on the value of At of (Check appro riate boxeS) I : _l At would . . . Increase Decrease remains Insufficient Comments \ the same Information Increase W/L /l Atd' “L 1‘ W —> 71;; 9 / V OfMM J Ztv (52¢ ncrease VM— ¢' £me W/L / L 7/52,} 9771/}; MW Increase W/L —l _] L w 5 at; OfMp [-Increase value / ‘9 J‘ZA”; 9 my OfRL EE 307A 807 3. Dynamic and Static CMOS. VTN = — VT,» = 0.8 V, [cm = km = 50 uA/VZ, x1 = 0 v4, -2¢F = 0.6 v, and y = 0.0 v”? (2 points) A) Write a correct Boolean expression for VOUT not involving VX. Vow :We V3» 1/6 VAL/0 011/11 M/flfi’ll/ f 15 MM (5 points) 3) Determine the power dissipation in transistor MN] when \4 g 2.2 V and VOW: 0.5 V. Although it may appear otherwise, the problem does provide enough information on this page. Hp; 15 72W Z I... 2 I122 : Kan/W +1470) : Wf/o—fi/Sv‘luZl/“p'ng (I) : 2Wfl’7 ; (2.510425%?) = W/W [DA/,1 I wag/1'1»; (5 points) C) Draw the circuit diagram of the static CMOS implementation of the dynamic CMOS gate shown above. l l l x i l ...
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This note was uploaded on 06/01/2008 for the course EE 307 taught by Professor Braun during the Spring '08 term at Cal Poly.

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Midterm1AS07 - EE 307A 807 MIDTERM EXAM#1 Braun CLOSED BOOK...

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