mos fundamental #1

mos fundamental #1 - Pratices: Exercise 1-1: Differences...

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon
Pratices: Exercise 1-1 : Differences between a bipolar structure and a MOS structure: Bipolar structure MOS structure Structure is complex Structure is simple Use 2 types of carriers for current flow (electrons and holes) Use only one type for current flow (electrons or holes) No oxide layer beneath the base terminal Oxide layer is beneath the gate terminal An isolation region is formed to satisfy pn junction Source and drain naturally satisfy pn junction isolation with respect to the substrate As the MOS structure is simple and isolation region is not needed, the manufacturing process become simpler, integration level is increased and the production cost become cheaper compared with the bipolar structure. Exercise 1-7 : ( 29 ( 29 = = = = = - = = - - k u g R layer inversion the of ce resis the Thus u V cm pF s V cm u u g Thus V V C u L W g V V V Given m m T GS ox n m T GS 3265 . 16 25 . 61 1 1 , tan , 25 . 61 1 10 5 . 3 700 10 25 , 1 , 1 2 4 2 1 / 6
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 2
This is the end of the preview. Sign up to access the rest of the document.

Page1 / 6

mos fundamental #1 - Pratices: Exercise 1-1: Differences...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online