Experiment A

Experiment A - Experiment A: Measurement of Transistor...

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Unformatted text preview: Experiment A: Measurement of Transistor Characteristics October 5, 2006 EE348-02 Jeff Gerfen Partners: Jessica Kiefer Sean Kregness Procedure XA1: In this portion of the experiment, we found and V A for an NPN based on the model that we calculated in our prelabs. We did this twice: once for i C = 1mA and once for i C = 0.1mA. Our raw data can be found below in Table 1. Vcc Vce VBR VCR Ib Ic ~ .1mA 2.17 0.13 0.455 2.049 .455uA .0408mA 4.9 0.23 0.433 4.65 .43uA .0934mA 7.9 2.96 0.43 4.9 .43uA .0988mA 10 5.054 0.43 5.01 .43uA .1mA 12.13 7.01 0.43 5.06 .43uA .1024mA 15.13 9.89 0.43 5.16 .43uA .1048mA 18.2 12.86 0.43 5.26 .43uA .1068mA Vcc Vce VBR VCR Ib Ic ~ 1mA 2.53 0.151 3.56 2.38 3.56uA 0.476mA 4.88 0.261 3.84 4.62 3.84uA 0.924mA 7.87 2.93 3.84 4.93 3.84uA 0.986mA 10 4.94 3.84 5.02 3.84uA 1.004mA 11.9 6.81 3.84 5.09 3.84uA 1.108mA 15.01 9.8 3.84 5.2 3.84uA 1.04mA 18.1 12.76 3.84 5.31 3.84uA 1.062mA Table 1: Raw data for i C = 0.1mA and i C = 1mA. Using the data from above, we were able to graph Ic vs. Vce. The graph is shown on the following page in Figure 1. Our results were exactly as expected, with Ib remaining nearly constant. Using the graph as well as our calculations from the prelab, we were able to determine V A and . 0.0002 0.0004 0.0006 0.0008 0.001 0.0012-2 0 2 4 6 8 10 12 14 Vce (V) Ic (A) Ib = .1mA Ib = 1mA Figure 1: Ic vs. VceFigure 1: Ic vs....
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This note was uploaded on 06/29/2008 for the course EE 348 taught by Professor Gerfen during the Spring '08 term at Cal Poly.

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Experiment A - Experiment A: Measurement of Transistor...

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