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# ie_sp07_hw12 - =14.8(b P=518.4μW Problem 3 Consider an...

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ECSE-2050 Spring 2007 Introduction to Electronics Homework 12 Due Thursday May 3 rd Book: “Microelectronic Circuit Design”, by Richard C. Jaeger and Travis N. Blalock Chapter 6, Sections 6.1-6.7 Chapter 7, Sec. 7.2 Class notes (lectures 21, 22, 23) Problem 1 An NMOS inverter with resistive load has a supply voltage VDD=3V. Assume transistor parameters of K n =60μA/V 2 , W/L=5, and V T =0.5V. Find (a) The value of the drain resistance such that V o =0.1V when V I =3V. (b) Using the results of part (a), determine V IL , V IH , V OL , and V OH (c) Find the high and low noise margins NM L and NM H Problem 2 An NMOS inverter with enhancement load is biased at a supply voltage VDD=3V, the inverter is designed such that V o =0.1V when V I =2.5V. Assume transistor parameters of K n =60μA/V 2 , and V T =0.5V. Neglect the body effect , find (a) The ratio L s L W L W ) / ( ) / ( (b) Assume (W/L) L =1, find the overall power dissipation in the inverter Ans: (a) L s L W L W ) /

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Unformatted text preview: ( ) / ( =14.8, (b) P=518.4μW Problem 3 Consider an NMOS inverter with enhancement load. The transistor parameters are V TNO =0.8V (for both source and load transistors), L s L W L W ) / ( ) / ( = 16, and the supply voltage VDD=5V, assume 365 . = f ϕ (a) Find V OH assuming the body effect coefficient is γ=0.9V 1/2 (b) Repeat part (a) while assuming the body effect coefficient is γ=0.35V 1/2 (c) Repeat part (a) while neglecting the body effect ECSE-2050 Spring 2007 Introduction to Electronics Problem 4 What are the logic functions of the two circuits shown below (AND, OR, NAND, NOR, XOR, etc) (a) (b) Problem 5 A CMOS inverter has VDD=2.1V, and the transistor threshold voltages are V TN = -V TP =0.4V, sketch the voltage transfer curve and label critical voltages in the figure for (a) K n /K p =1 (b) K n /K p =0.5 (c) K n /K p =2...
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ie_sp07_hw12 - =14.8(b P=518.4μW Problem 3 Consider an...

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