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quiz 2 solutions

# quiz 2 solutions - Name sewn ems ECSE 2050 Introduction to...

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Unformatted text preview: Name sewn ems ECSE 2050 Introduction to Electronics Spring 2007 Quiz 2 Print you name on every page, show all work to ensure partial credit. Problem 1 (15 points) Problem 2(10 points) Problem 3(35 points) Problem 4 (20 points) Total Name: Problem 1 (15pts) For the PMOS ampliﬁer shown below, assume th= -0.8V, Kp’W/L=3.5mA/V2. Neglect channel length modulation 2.5V \jY ‘ (i)For VGI = V62 = 0V, Find the following voltages (Vx, Vy, Va], and de) // / "L El 1%: {a 1% 2i Kf/{Ad . (Vise; Wag / 2, L V S” \f ,_ l«o.%l) 0. 3* MA :1‘5SMA “g 1‘ “7/ e \l ikow-w: m SQE: § ' X LLlefl x/ V‘seblw {all \isgg’uo): O.3‘SL( F) f) LVY :2 it? "“ V592): lrlsgv L K733 ~G 12‘ L. f3) 32; 5&3 'L, .2) 639ml: 2 lxﬁ‘gegmA/VL kau 0 ~ 6-8) 2 "2) \lgzyzuil (J) WVSV] 2 Lv‘il "A146 G‘K'MxQKm :- psv a Name k" 'i) What is the function of the two transistors (M3 and M4) CWM MW M «W Pickup“? ' (iii) If VG1=VG2=ij what is the maximum value of Vin after which the transistor M3 leaves its operating mode AAC Vin :2 \ﬂ“ )M 3 ._ ,_ \ akin k 0 ‘ \L ., Mg: may egg Smggm {swam Qt) wait L mm mm M“ M1 1 Sigma-Am {name}: . 1 Fe; M5 1 2 g\{ V593 3" V4133 M “IVA M3 2(S‘V,“ \Lﬁ : 23V ~ \$4939 e“ 03W \_Q_r33\f \LL \l Rf», M1 (Sgt M13 “ G] _L I z 1%,: A}. K: 34’: (v1 ﬂvq ,w‘ﬂ] .b (831. G i ~‘> gcmfx: 1 “MSW/wt (Vi/ﬁg , 0' 2/ ‘2 : 2’47 > V5i A16? \ Name: ~ ‘» Problem 2 (1013“) For the circuits shown below(parts a and b), use VTn=O.4V, K’W/L=2mA/V2. Neglect the channel length modulation Sketch IX as a function of VX . Assume Vx goes from 0 to VDD=1.8V. Determine the value of Vx at which the device changes its region of operation. 55x Ag \lmAVT W L V A) \gmég+\l(v , L 1%“: LVx"\lT) n” m 2 12‘! amwv (WA/«3 am tax/Mm I2. I izcv SDV¢BVAQ "VdZ—i \l 1.. T" c Fli 7'“. P A 4 g l 9“ 3‘) l O K x» Name: Name: Problem 3 (35) out—w: «NV—- W a a 2 R91 Rd 400k 2 .5k 4 l— 2911700? I12 100*: W‘ac AV DWc ‘ Vout (2) R2 R [Did R4 39% g 400 500 All transistors are enhancement type n-channel MOSFETS with k’W/L=64mA/V2, V¢=1.7V, Cgs=0pF, and ng = 1.5pF, estimate the following quantities: @ IDIIQ, VGSIIQ, and VDSIIQ the Q point values for the FET(M1) C m +0 “may WW) I ~ 14.5-mA c). D\ M QPOWQ‘V LV’l) 3V a» VW ,_ m 2 l 3 k 4%“ M \3 A}; A 2,\< (,ng\ V1) §§R Vgg‘ : V3,», (x 35/55‘4 H) gﬁev ll VA :2 zor— IJ‘xRA 2' 26 w AgmszgKél W” / V; T. VG” “\‘re‘ﬂﬁ : L‘V w 1.?)7‘3’V : \ﬁﬁgV ‘MJ «Lng (Lim'éaiz (Raﬁ;le Q VAS‘: Mgr Vsi : Cgmgvﬂ \ﬁggv : ggmsv ) gm the trans-conductance for M1 m 5 W ‘- ame 2k,__\§__jb :ngumwvmxhgmA ~ 2hmA/V Name: W... e input impedance of the second Stage (Rita) Rem" a: @0101“ Email ﬁguw.%§<®_ >5; E) X“ ) GV=Vout(l)/Vsig= the midband frequency voltage gain (Hint: Draw the small signal of the ﬁrst ampliﬁer M 1) 2 WW“ 36W? imgsgm an Wm [wrswk ‘ ., Q ,1 W m (anew) Rt” ’ 'v , i. _ _. ' at M t 4 a,“ 993 Rlnrt RM} RM a umn<.:n\\\tyo m n @KJL a - thNV L2£Kﬂ\\9~“‘5{l’~ﬂ3 W are VAL \l . gnymwmﬁﬁ \ + th‘cA/‘Jx WO‘JI CW 3:: ._\Q.';ic§ )‘V 9/ t (X9 \ @he low frequency 3db point of the ﬁrst stage (Vout(1)/Vsig)) (consider only the effect of C1, C2, and C3) maid; . (:5 q, “367‘! ‘ («L “M C; Reta % b Name: \ (A; 0 f) fh the high frequency 3db point of the ﬁrst ampliﬁer stage (Vout(1)/Vsig)) \ 'g‘n: 75?E?Ei§ﬁ§h (ﬁx 2 C465 3* C3A( ‘+ {jij a ’ / =‘%\$* %d€“* met ¢RL= R&VR%L ‘Jrgmgg‘ 2 1.54% K-SL A\ ‘3ﬁi r . 7; Lgxﬂ: (\ + “NO .szah%\<Jx« ML 2Ah7€§0”3x\0-D CM : 2¥.?§3§F g & Egamgg : @931“ wan a game «AL 1&3: x f: ‘gé z L“; K“? m v 2.3}ng mth acaepm {man 34% .33 i ‘8‘" Name: i Gv=Vout(2)/Vsig= the overall midband frequency voltage gain gin-en Ml ‘5sz 40 M’MV l). QV :2 All ’I 6vé S w )0 4w“? l’l amuQthlRLD ‘7‘ mci'éé, x «3‘5 \ ?/ K)What is the function of the second stage Mu» gw Name: Hi Problem 4 (20) The circuit shown below produces two outputs. Each transistor is characterized by its small signal model (gm, r01 VDD _ 64 CR0 . . (a) Draw the small signal model of the PMOStrans1stor M2, and derive an expression for the output resistance Rout S +—.—_— Rout M2 (gm29r 02) Name «3” \ g (b) Now, draw the small signal model for the complete circuit (Hint. Draw the small signal model for the transistor M1, and include the loading effect of the other transistors) 3 V1 M a W cVML in q M . l ﬁe amt Vag’ “7;; £03 V3“, 3 W fa FM, J“ W 9! P I gm; 0; aw ﬂaw? a M‘ g ad; some; <1 h N :5 l W \v 7/ (c) If the output is taken as Voutl, what is the type of ampliﬁer (Common source, common-drain, common gate) Cgmmfm ~ GKT‘UPW ll , (d) Assume that we will only ignore the effect of r01 (output resistance of M1), prove that 1 // r Voutl _ gmg 02 mg? YUAU’“ @511 gm2 gm! ' V_”/,M,.,,,,, , ~ dagijzCL Mgg‘xamc/L) W'ﬁ‘ "U‘L A \ :1 \ W \St; n \ x A; m: thw‘ “9% jfiﬁ/ﬁ/ ML” 9‘0 LB mG \ %,m\ L ami- , I m“ \ Jr 3”“ ( :3mn, “37810) z: “‘3 '1- ’ ﬂarvﬁ—ﬁl V33” \shm :N "\e has. , (e) Now assume that we jar’e going to take the output as Vout2, , what 15 the type of 9’ ampliﬁer (Common source, common—drain, common gate) 12 a? 63" (f) Given the type of ampliﬁer from part (6), prove that the gain of the ampliﬁer is 4;. 1 //r03 //r04 V0ut2___ gm3 Vin 1 + 1 // r gm] gmz 02 1 l ‘ 9g , kgjsjizskwcsz ‘m Cﬁ‘m'mc‘n same, anﬁbfmﬁ mm \$8M a \l / M?“ e: M “N ‘ R“ \I; I 1 Vs "sf am“ Rs I I ~ ‘ \m \\ a; ,\ t: M » ,5 q when . Am oi, 4M 0(ka 3mg ewewe MAW” \ Muhnm. Mn vi x5ka a Metka a ~— camx 3‘03 9%) M “L T A l 4‘ am; (—332)’ £02.) r‘ a - ‘ \x M n a» VMEL M 3mg 2 ‘1 VWM ‘ ﬁr ‘ \$02. 13 ...
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