2n5458rev0d - SEMICONDUCTOR TECHNICAL DATA Order this...

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1 Motorola Small–Signal Transistors, FETs and Diodes Device Data N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage V DS 25 Vdc Drain–Gate Voltage V DG 25 Vdc Reverse Gate–Source Voltage V GSR –25 Vdc Gate Current I G 10 mAdc Total Device Dissipation @ T A = 25 ° C Derate above 25 ° C P D 310 2.82 mW mW/ ° C Junction Temperature Range T J 125 ° C Storage Channel Temperature Range T stg –65 to +150 ° C ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate–Source Breakdown Voltage (I G = –10 μ Adc, V DS = 0) V (BR)GSS –25 Vdc Gate Reverse Current (V GS = –15 Vdc, V DS = 0) (V GS = –15 Vdc, V DS = 0, T A = 100 ° C) I GSS –1.0 –200 nAdc Gate–Source Cutoff Voltage (V DS = 15 Vdc, I D = 10 nAdc) V GS(off) 1.0 -7.0 Vdc Gate–Source Voltage (V DS = 15 Vdc, I D = 2 00 Adc) V GS 3 .5 Vdc ON CHARACTERISTICS Zero–Gate–Voltage Drain Current (1) (V DS = 15 Vdc, V GS = 0) I DSS 2 .0 6 .0 9 .0 mAdc SMALL–SIGNAL CHARACTERISTICS Forward Transfer Admittance Common Source (1) (V DS = 15 Vdc, V GS = 0, f = 1.0 kHz) y fs 1 5 00 5 5 00 mhos Output Admittance Common Source (1) (V DS = 15 Vdc, V GS = 0, f = 1.0 kHz) y os 10 50 mhos Input Capacitance (V DS = 15 Vdc, V GS = 0, f = 1.0 MHz) C iss 4.5 7.0 pF Reverse Transfer Capacitance (V DS = 15 Vdc, V GS = 0, f = 1.0 MHz) C rss 1.5 3.0 pF 1. Pulse Test; Pulse Width 630 ms, Duty Cycle 10%. Preferred
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This note was uploaded on 07/25/2008 for the course PHY 440 taught by Professor Abolins during the Spring '06 term at Michigan State University.

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2n5458rev0d - SEMICONDUCTOR TECHNICAL DATA Order this...

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