Nano Labs (Lec3 imprint lithography)

Nano Labs (Lec3 imprint lithography) - Imprint Lithography...

Info iconThis preview shows pages 1–11. Sign up to view the full content.

View Full Document Right Arrow Icon
Nano Labs, MAE C187L/C287L Imprint Lithography
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Nano Lab MAE C187L/C287L Optical Lithography Photolithography (also optical lithography) is a process used in microfabrication to selectively remove parts of a thin film (or the bulk of a substrate). It uses light to transfer a geometric pattern from a photomask to a light-sensitive chemical (photoresist or simply "resist") on the substrate. A series of chemical treatments then engraves the exposure pattern into the material underneath the photoresist.
Background image of page 2
Nano Lab MAE C187L/C287L Resolution Limitation of Optical Lithography (Projection) Optical lithography resolution NA k R 1 Where R is the resolution is the wavelength of light k1 is a constant related to resist NA is so-called numerical aperture Sin n NA Where n is refraction index, is the maximum cone angle of the exposure light beam
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Resolution Limitation of Optical Lithography (Projection) For projection lithography NA k R 1 Where R is the resolution is the wavelength of light k 1 is a constant related to resist NA is so-called numerical aperture, Sin n NA Where n is refraction index, is the maximum cone angle of the exposure light beam Nano Lab MAE C187L/C287L
Background image of page 4
Extreme Ultraviolet Lithography (EUV) The major issue is to reduce the wavelength of the UV light source for photolithography. If the wavelength can be reduced to EUV range, it will lead to manufacturing technology between 10nm and 30nm generations.
Background image of page 5

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
EUV Lithography The major problem for EUV lithography is its light source intensity and expensive system (>50 M). Nano Lab MAE C187L/C287L
Background image of page 6
Nano Lab MAE C187L/C287L E-beam Lithography The major problem for e- beam lithography is that it takes long time to generate nano paterrns over large areas in the series process. E-beam Resist E-beam/Resist Interaction
Background image of page 7

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Nano Lab MAE C187L/C287L Scanning Probe Lithography Fe atoms on Cu(111) The major problem for scanning probe lithography again is that it takes long time to generate nano paterrns over large areas in the series process.
Background image of page 8
Nano Lab MAE C187L/C287L Nanofabrication High- resolution (<30 nm) High-speed Low-defect Low-cost EUV Yes Yes Yes No E-beam Yes No Yes Yes SPM Yes No Yes Yes
Background image of page 9

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
International Technology Roadmap for Semiconductors (ITRS) There are many new technologies in development, including 157nm, 193nm immersion and extreme ultraviolet (EUV) lithography. Which of these will eventually prevail? The ITRS seems to have come to a conclusion. It thinks the 193nm scanner (including the use of wet scanners) will be the mainstream solution at the next two technology nodes. If one day water-based immersion technology can be extended in its application, the use of fluid rather than air for lithography will be the star technology for the 32nm and 22nm environments. Beyond 22 nm, different lithographic techniques need to be developed.
Background image of page 10
Image of page 11
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 07/28/2008 for the course MAE 187L taught by Professor Chen during the Spring '08 term at UCLA.

Page1 / 43

Nano Labs (Lec3 imprint lithography) - Imprint Lithography...

This preview shows document pages 1 - 11. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online