01 7587873 midterm - Bias is adjusted such that V d1sat...

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1 UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences Midterm EECS 240 B. E. BOSER March 15, 2000 SPRING 2001 Show derivations and mark results with box around them. Erase or cross-out erroneous attempts. Mark your name and SID at the top of the exam sheet. 1. [20 points] What value of W maximizes the (low-frequency) signal-to-noise ratio at the output of the circuit shown below? Ignore flicker noise and assume that the transistor is in the forward active region. I
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Unformatted text preview: Bias is adjusted such that V d1sat =200mV. C ox =10fF/ m 2 . W/1 m C D 2pF C f =500fF I in I Bias V o 2 2. [30 points] For the current source shown below, calculate a) The low-frequency thermal noise density at the output, f i n o 2 , in pA/rt-Hz @ R.T. b) The flicker noise corner frequency. Given: I D1 =1mA, I D2 =250 A, g m1 =4mS, K f =10-29 AF, C ox =5fF/ m 2 . R 1 1k M1 100/1 R 2 1k M2 100/1 V DD V SS I o...
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01 7587873 midterm - Bias is adjusted such that V d1sat...

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