pset 3 - Use the following values for the tight-binding...

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon
University of California, Berkeley EE230 - Solid State Electronics Prof. J. Bokor pset 3.fm PROBLEM SET 3 (Due Tues., March 11, 2008) Computer Project Carry out the calculation of the band structure for Si and GaAs using the semi-empirical tight binding method with only first-nearest neighbors. Calcluate the band dispersions along the (100), (111), and (110) directions for the first 8 bands (4 valence bands, 4 conduction bands). Plot your results in the reduced zone scheme, and use at least 10 k points in each direction.
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 2
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: Use the following values for the tight-binding parameters: You may use whatever computer and software you wish. I recommend MATLAB. Student accounts on EECS Instructional workstations are available. Table 1: SETBM Parameters for Si and GaAs in eV s A s B p A p B E ss E xx E xy E sp AB E sp BA Si-4.03-4.03 3.17 3.17-2.03 0.79 1.51 1.47 1.47 GaAs-6.01-4.79 0.19 4.59-1.75 0.23 1.18 1.82 0.93- 2 -University of California, Berkeley EE230 - Solid State Electronics Prof. J. Bokor...
View Full Document

This note was uploaded on 08/01/2008 for the course EE 230 taught by Professor Bokor during the Spring '08 term at University of California, Berkeley.

Page1 / 2

pset 3 - Use the following values for the tight-binding...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online