ece137a_ps4_2008

ece137a_ps4_2008 - ECE137A Problem set #4 +Vss Rs Vout Vin...

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1 ECE137A Problem set #4 +Vss -Vdd RL Rs Rg Rgen Vgen Vin Vout Problem 1 Common-drain stage. The PMOS FET has 1.2 nm oxide thickness, 250 nm gate length, and a -0.4 V threshold. Mobility is 200 cm^2/(V-s). 1/lambda is 15 V. Use a constant- mobility model. Choose the gate width and Rs so that the transistor carries 5 mA and has 0.6 V on the source electrode. The load resistance is 1 kOhm, Rg is 1 MOhm, Rgen is 100 kOhm. Find the bias conditions, the small-signal gains Vout/Vin, Vout/Vgen, and Vout/Vin, and find the input and output impedances. Problem 2 The circuit above uses 2n3904 bjts. -- use datasheet values for beta and Rce. For DC bias, Vin+ and Vin- are zero volts. Vcc= +5 V, Vee= -5V. The DC emitter currents are each 2 mA, and the DC collector voltages are 2.5 V. Rb1=Rb2=10 kOhm. RL1,2 are 10 kOhm. Find all resistor values. Find the bias conditions, the differential input impedance, the differential gain, and the common-mode rejection ratio. Problem 3
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ece137a_ps4_2008 - ECE137A Problem set #4 +Vss Rs Vout Vin...

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