ece137a_ps6_2008

ece137a_ps6_2008 - mode gains. (c) Find the differential...

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1 ECE137A Problem set #6 Vin- Vin+ Ri Ri Re3 Re4 Rc4 Q1 Q2 Q3 Q4 Q5 Q7 Rc6 Re7 Rc2 Rc1 +Vcc -Vee Vout RL Q6 Q8 Q9 Ree8 Ree9 Rc8 Rc5 Ree5 Ree6 Problem 1: The supplies are +/- 5 V. The transistors all have beta=500 and Va=100 Volts. The Emitter resistors (Re3 and Re4, Ree8, Ree9) all have 200 mV DC voltage drop. Ri=10 kOhm. RL=1 kOhm. Ree5=Ree6=100 Ohm The DC input voltages are 0 V, the DC output voltage is to be 0 V. Q1 and Q2 are biased at 100 uA, Q5 and Q6 at 1 mA, and Q7 at 5 mA. The bases of Q5 and Q6 are at +3 Volts. Find all bias values, all resistor values, the differential and common-mode voltage gains, the CMRR, and the output impedance. Vin- Vin+ Ri Ri Re3 Re4 Rc4 Q1 Q2 Q3 Q4 Q10 Ree10 +Vcc -Vee Vout RL Q5 Q6 Q7 Q8 Q9 Rd6 Rd9 Rg9a Rg9b a) Find all resistor values, all FET widths, all DC bias currents and voltages. (b) Find the amplifier differential and common
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Unformatted text preview: mode gains. (c) Find the differential input impedance. Find the output impedance and the maximum peak-peak output swing. Problem 2: The NMOS FETS have 1.2 nm oxide thickness, 250 nm gate length, and a 0.4 V threshold. Mobility is 400 cm^2/(V-s), and 1/lambda=25V,. The PMOS FETs are the same, except have -0.4 V threshold and 200 cm^2/(v-s) mobility. The FETs are to all opreate at |Vgs|=0.6 V. Id1=Id2=100 uA. Id5=Id6=Id7 Id8=Id9=1 mA. Ic3=Ic4. The voltage drops across Re3 and Re4 are 300 mV. The supplies are +/- 2 V, and the gates of Q8 and Q9 are at +0.25 V. Ignore the effect of lambda in the DC analysis but not the AC analysis. . Q10 operates at 1 mA emitter current. Vin- and Vin+ are at zero volts DC, as is Vout. The BJTs have beta=200. Rg9A is 1 MOhm....
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