2n3906 - MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this...

Info iconThis preview shows pages 1–4. Sign up to view the full content.

View Full Document Right Arrow Icon
1 Motorola Small–Signal Transistors, FETs and Diodes Device Data General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 40 Vdc Emitter–Base Voltage V EBO 5.0 Vdc Collector Current — Continuous I C 200 mAdc Total Device Dissipation @ T A = 25 ° C Derate above 25 ° C P D 625 5.0 mW mW/ ° C Total Power Dissipation @ T A = 60 ° C P D 250 mW Total Device Dissipation @ T C = 25 ° C Derate above 25 ° C P D 1.5 12 Watts mW/ ° C Operating and Storage Junction Temperature Range T J , T stg –55 to +150 ° C THERMAL CHARACTERISTICS (1) Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R q JA 200 ° C/W Thermal Resistance, Junction to Case R q JC 83.3 ° C/W ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (2) (I C = 1.0 mAdc, I B = 0) V (BR)CEO 40 Vdc Collector–Base Breakdown Voltage (I C = 10 m Adc, I E = 0) V (BR)CBO 40 Vdc Emitter–Base Breakdown Voltage (I E = 10 m Adc, I C = 0) V (BR)EBO 5.0 Vdc Base Cutoff Current (V CE = 30 Vdc, V EB = 3.0 Vdc) I BL 50 nAdc Collector Cutoff Current (V CE = 30 Vdc, V EB = 3.0 Vdc) I CEX 50 nAdc 1. Indicates Data in addition to JEDEC Requirements. 2. Pulse Test: Pulse Width v 300 m s; Duty Cycle v 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Order this document by 2N3905/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N3905 2N3906 *Motorola Preferred Device CASE 29–04, STYLE 1 TO–92 (TO–226AA) 1 2 3 * Motorola, Inc. 1996 COLLECTOR 3 2 BASE 1 EMITTER REV 2
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 μ A to 100 mA. Sourced from Process 66. Absolute Maximum Ratings* TA = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 2N3906 PZT3906 MMBT3906 Symbol Parameter Value Units V CEO Collector-Emitter Voltage 40 V V CBO Collector-Base Voltage 40 V V EBO Emitter-Base Voltage 5.0 V I C Collector Current - Continuous 200 mA T J , T stg Operating and Storage Junction Temperature Range -55 to +150 ° C C B E TO-92 B C C SOT-223 E C B E SOT-23 Mark: 2A 1997 Fairchild Semiconductor Corporation
Background image of page 2
2N3906 / MMBT3906 / PZT3906 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS (except MMPQ3906) * Pulse Test: Pulse Width 300 μ s, Duty Cycle 2.0% Spice Model V (BR)CEO Collector-Emitter Breakdown Voltage* I C = 1.0 mA, I B = 0 40 V V (BR)CBO Collector-Base Breakdown Voltage I C = 10 μ A, I E = 0 40 V V (BR)EBO Emitter-Base Breakdown Voltage I E = 10 μ A, I C = 0 5.0 V I BL Base Cutoff Current V CE = 30 V, V BE = 3.0 V
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 4
This is the end of the preview. Sign up to access the rest of the document.

Page1 / 12

2n3906 - MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this...

This preview shows document pages 1 - 4. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online