IRFU014_N-ch

IRFU014_N-ch - PD-9.701A International 1:212 Rectifier...

Info iconThis preview shows pages 1–6. Sign up to view the full content.

View Full Document Right Arrow Icon
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 2
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 4
Background image of page 5

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 6
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: PD-9.701A International 1:212 Rectifier lRFR014 M 0 Dynamic dv/dt Rating 0 Surface Mount (IRFR014) D _ 0 Straight Lead (lRFU014) VDSS ‘ 60V 0 Available in Tape & Reel 0 Fast Switching G RD3(on> = 0.209 0 Ease of Paralleling 0 Simple Drive Requirements Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost»effectiveness. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight iead version (IRFU series) is for through—hole mounting applications. Power dissipation levels up to 1.5 watts are possrbie In typical surface mount applications. D_PAK WAK TO—252AA TO-251AA DATA SHEETS Absolute Maximum Ratings Parameter Max. Units V in @j‘c : 25°C Continuous Drain Current, VGs @ 10 V 7.7 [D @ Tc = 100°C Continuous Drain Current, VGs @ 10 V 4.9 A m :22, \ EEISEFLDIeEEwr3019_ 31 Pa @ Tc : 25°C Power Dissipation _ 25 W PD @ TA = 25°C Power Dissipation (PCB Mount)” 2.5 Linear Derating Factor 0.20 w W/OC Linear Derating Factor (PCB Mount)“ 0.020 Ves Gate-to~Source Voltage i20 V EAs Single Pulse Avalanche Energy (2‘) 47 mJ dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns T3151; v vJunctionrand Storage Temperature Range -55 to +150 CC 7‘ Soldering Temperature, for 10 seconds 260 (1.6mm from case) Thermal Resistance r777 77, i v g w 7’ Parameter Min. Typ. Max. Units ReJc Junctionqugse >7 __7 r — —— 5.0 RGJA Junction-to~Ambient (PCB mouflt)“ fl — —— 50 °C/W RGJA Junctionjo-rAflgiejtfi — ~— , 110 " When mounted on 1" square PCB (FR~4 or (5—10 Material). For recommended footprint and soldering techniques refer to app ication note #AN~994. 1121 IRFRO14 |RFUO14 1:212 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions V(BR)DSs Drain-to-Source Breakdown Voltage 60 — — V Ves=OV, lD= 250uA AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient ~— 0.068 — V/°C Reference to 25°C, In: 1mA RDs(on) Static Drain-to-Source On-Resistance — — 0.20 Q VGs=1OV, |D=4.6A @ VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS=VGS, ID: 250HA gis Forward Transconductance 2.4 — — S Vos=25V, |D=4.6A @ loss Drain-to-Source Leakage Current —; _ 25 pA VDS=60V‘ VGS=OV — — 250 VDs=48V, VGs=OV, TJ=125°C IGSS Gate-to-Source Forward Leakage — — 100 “A Ves=20V Gate-to-Source Reverse Leakage — — -1OO VGs=-20V 09 Total Gate Charge — — 11 |D=1OA Qgs Gate-to-Source Charge »— — 3.1 nC VDs=48V di Gate-to-Drain ("Miller") Charge — — 5.8 Ves=10V See Fig. 6 and 13 @ tam.) Turn-On Delay Time — 10 — VDD=SOV tr Rise Time — 50 — ns |D=10A tum) Turn-Off Delay Time — 13 — RG=24Q ti Fall Time — 19 — RD=2.7Q See Figure 10 @ LD 1 Internal Drain Inductance — 4.5 — gimefoggfi’) D i—— “H from package GE Ls Internal Source Inductance — 7.5 - and ceme" 0f the contact 3 Ciss input Capacitance — 300 — Ves=0V Coss Output Capacitance — 160 — pF VDs=25V Crss Reverse Transfer Capacitance — 29 — f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter ' . . . Test Conditions Continuous Source Current MOSFET symbol (Body Diode) ‘ showing the PH ISM Pulsed Source Current I ; integral reverse 56‘; ‘ (Body Diode) CD ‘ p-n junction diode. VsD Diode Forward Voltage . TJ=25°C, ls=7.7A, VGs=0V @ Reverse Recovery Time Reverse Recovery Charge 0.40 uc di/dt=100A/us @ Forward Turn-On Time Intrinsic turn-on time is negiegible (turn-on is dominated by Ls+LD) Notes: (D Repetitive rating; pulse width limited by © 15031 CA, di/dtsQOA/us, VDDSV(BR)Dss, max. junction temperature (See Figure 11) TJS150°C ® VDD=25V, starting TJ=25°C, L=924uH @ Pulse width S 300 us; duty cycle 32%. Re=25§2, IAs=7.7A (See Figure 12) 1122 ID, Drain Current (Amps) ID, Drain Current (Amps) v65 rap 15v 10v 50v 7 av svov 5,5v s.uv BDYYaM A.5V o o o 4.5V 10‘1 100 ZOus PULSE WIDTH TC : 250C 101 V03, Drain—to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Tc=25°C 4 5 6 7 VDS - EOUS PULSE WIDTH B 9 10 V93, Gate—to—Source Voltage (volts) Fig 3. Typical Transfer Characteristics RDS(ON), Draimto—Source On Resistance IRFROM IRFU014 .............................................................................................J......._...................... ves mp my my a.av 7.0V 5 av 5 av 5.0V aava 4.5V 101 4.5V 100 lD, Drain Current (Amps) EOUS PULSE WIDTH 1500C TC: 10° 101 V03, Drain-to-Source Voltage (volts) 10’1 Fig 2. Typical Output Characteristics, TC=150°C (Normalized) 160 ’40 20 0 .30 40 60 80 TJ, Junction Temperature (°C) 100 120 140 160 Fig 4. Normalized On-Resistance Vs. Temperature 1123 DATA SHEETS IRFRO‘I4 |RFU014 60° VGS = ov, f = 1MHZ c188 : cgS + ng, CUS SHORTED E CFSS : ng _O we C055 : Cos + C a 5; (D O) G: mo £2 5; § 8 C185 :1) = e m mo C 3 r: o i USS (g ‘“ *7 O 200 2 63 (5 mo ¢ c 0 "55 :> FOR TEST CIRCUIT 0 SEE FIGURE 13 m0 1M VDs, Drain-to-Source Voltage (volts) , 03, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1M A 5 OPERATION IN THIS AREA LIMITED 3 EV “03mm E 2 < ml 33 :: Q. m? c E 2 < 5 3 v 0 a“, 2 :: 1500c : ‘c-v 3 10 5 0 5 w 1w .E 9 25°C S a 0 C3 > . (1) Q 1 [I _ - 5 8 TC=25°C __ 2 TJ=1SOOC _1 VGS = 0V SINGLE PULSE 10 0,4 0.5 1,2 1.5 2.0 2.4 0‘10'1 a 5 1 2 5 10 2 a 102 2 5 103 V30, Source~to-Drain Voltage (volts) V05, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 1124 IRFR014 IRFU014 Vos 110v 7/? E- Pulse Width s nus < Duty Factor 5 0.1% E S S o E E o 9’ W E E < u: D I (I) To, Case Temperature (’0) We") 1, rum) 1, Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature 10 »\ SINGLE PULSE [THERMAL RESPONSE) Thermal Response (zeJC) O NOTES: 1. DUTY FACTOR. D=t1/t2 _2 2. PEAK TJ=PDM x ztmc + TC 10 10‘5 10“ 10’3 10'2 0 a 1 1 10 t1, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction—to-Case 1125 IRFROM |RFUOI4 Vary tp to obtain required IAS BOTTOM 7.7A Fig 12a. Unclamped Inductive Test Circuit Visamss EAS, Single Pulse Energy (mJ) VDD 25 50 75 _ 100 125 150 Starting TJ, Junction Temperature(°C) 'AS — — * “ ’— — ‘ Fig 120. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms VS' Dram current Current Regulator 10V '0 Charge —> Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit — See page 1505 Appendix 8: Package Outline Mechanical Drawing — See pages 1512, 1513 Intemational Rectifier Appendix C: Part Marking Information — See page 1518 Appendix D: Tape & Reel Information — See page 1523 1126 ...
View Full Document

This note was uploaded on 08/06/2008 for the course ECE 137AB taught by Professor Rodwell during the Winter '08 term at UCSB.

Page1 / 6

IRFU014_N-ch - PD-9.701A International 1:212 Rectifier...

This preview shows document pages 1 - 6. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online