2n3904 - MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this...

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Motorola Small–Signal Transistors, FETs and Diodes Device Data General Purpose Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage V EBO 6.0 Vdc Collector Current — Continuous I C 200 mAdc Total Device Dissipation @ T A = 25 ° C Derate above 25 ° C P D 625 5.0 mW mW/ ° C Total Device Dissipation @ T C = 25 ° C Derate above 25 ° C P D 1.5 12 Watts mW/ ° C Operating and Storage Junction Temperature Range T J , T stg –55 to +150 ° C THERMAL CHARACTERISTICS (1) Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R q JA 200 ° C/W Thermal Resistance, Junction to Case R q JC 83.3 ° C/W ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (2) (I C = 1.0 mAdc, I B = 0) V (BR)CEO 40 Vdc Collector–Base Breakdown Voltage (I C = 10 m Adc, I E = 0) V (BR)CBO 60 Vdc Emitter–Base Breakdown Voltage (I E = 10 m Adc, I C = 0) V (BR)EBO 6.0 Vdc Base Cutoff Current (V CE = 30 Vdc, V EB = 3.0 Vdc) I BL 50 nAdc Collector Cutoff Current (V CE = 30 Vdc, V EB = 3.0 Vdc) I CEX 50 nAdc 1. Indicates Data in addition to JEDEC Requirements. 2. Pulse Test: Pulse Width v 300 m s; Duty Cycle v 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Order this document by 2N3903/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N3903 2N3904 *Motorola Preferred Device CASE 29–04, STYLE 1 TO–92 (TO–226AA) 1 2 3 * Motorola, Inc. 1996 COLLECTOR 3 2 BASE 1 EMITTER REV 2
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2N3904 / MMBT3904 / PZT3904 2N3904 MMBT3904 PZT3904 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* TA = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Parameter Value Units V CEO Collector-Emitter Voltage 40 V V CBO Collector-Base Voltage 60 V V EBO Emitter-Base Voltage 6.0 V I C Collector Current - Continuous 200 mA T J , T stg Operating and Storage Junction Temperature Range -55 to +150 ° C C B E TO-92 B C C SOT-223 E C B E SOT-23 Mark: 1A 1997 Fairchild Semiconductor Corporation
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2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units V (BR)CEO Collector-Emitter Breakdown Voltage I C = 1.0 mA, I B = 0 40 V V (BR)CBO Collector-Base Breakdown Voltage I C = 10 μ A, I E = 0 60 V V (BR)EBO Emitter-Base Breakdown Voltage I E = 10 μ A, I C = 0 6.0 V I BL Base Cutoff Current V CE = 30 V, V EB = 0 50 nA I CEX Collector Cutoff Current V CE = 30 V, V EB = 0 50 nA OFF CHARACTERISTICS ON CHARACTERISTICS* SMALL SIGNAL CHARACTERISTICS
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2n3904 - MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this...

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