ece137a_notes_set_2

ece137a_notes_set_2 - MOSFET Physical Structure...

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MOSFET Physical Structure N+ source N+ drain source contact (silicide) drain contact (silicide) N+ poly gate gate metal (silicide) dielectric sidewall gate oxide P substrate SDSDSDS G G W g Cross-Section Layout P substrate gate dielectric N+ polysilicon gate inversion layer (6 FETs, each of gate width W g , connected in parallel)
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" (J) /4'~r,. tt::ir£ ~ ~,.~.r , c~~.;1:~ - tj's c:e,,r~6,' I) S"'"~~ 114.r~S'4.M =" ~4~.s'r'" t:J~ z 2) /If'ttJ6,'~7 -~~/~I~,' .J:a"',-u 0S - ~4) '("/ -I- ) ~} / 3) ~&/D.7-/M_'/re/: :Id AI (~s-J-2<J (/ -I- AJi>.sJ
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I d V gs V th Δ V MOSFETs: Three Regions of Gate Voltage 2 , ) ( limited mobility is current , threshold above little a is When th gs D gs V V I V μ ) ( limited velocity is current , threshold above far is When , V V V I V th gs v D gs Δ mobility-limited velocity-limited ld" subthresho " : off (almost) is r transisto , threshold than less is When gs V almost off / g sat L v V = Δ
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MOSFET DC Characteristics: Mobility-Limited Case : current limited mobility I d V gs V th mobility-limited velocity-limited voltage, knee the n larger tha voltages drain for Applies I D V DS increasing V GS ) 1 ( ) )( 2 / ( 2 , DS th gs g g ox D V V V L W c I λ μ + =
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MOSFET DC Characteristics: Velocity-Limited Case ) )( 1 ( , V V V V v W c I th gs DS sat g ox v D Δ + = λ I d V gs V th mobility-limited velocity-limited I D V DS
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ece137a_notes_set_2 - MOSFET Physical Structure...

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