This preview has intentionally blurred sections. Sign up to view the full version.
View Full DocumentThis preview has intentionally blurred sections. Sign up to view the full version.
View Full DocumentThis preview has intentionally blurred sections. Sign up to view the full version.
View Full Document
Unformatted text preview: Lets assume we will use the value of Vdsat=0.5 v Now there can be two different approaches: Approach1: Using equation We have Id = 800 uA and hence the value of VDS=1.8R*I Dsat =1V This value of VDS>>V Dsat and hence due to velocity saturation effect the transistor has entered saturation. Approach2: Using equation We get the value of I Dsat as 300uA and the value of VDS as before as 1.5V . This shows that the transistor is in saturation which is again the effect of velocity saturation. Note: Both approaches get credit!!! Also note that this is a first order model for velocity saturation and thus different simplification give different answers, Hand analysis is usually used to approximate the region of operation and the general trend of the device and is then followed by accurate simulations....
View
Full Document
 Spring '08
 Eltawil
 Transistor, velocity saturation, Vacuum tube, Vin, velocity saturation effect

Click to edit the document details