Experiment 6 Report

# Experiment 6 Report - Experiment 6 MOSFET Amplifier Design...

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Experiment 6 MOSFET Amplifier Design with Active Load Eugene Gallagher Partner: Bryan Richardson Introduction In this lab we will investigate the use of an NMOS amplifying transistor with PMOS devices configured as a current mirror/active load. Also, we will look into the body effect and how it influences the overall small-signal gain performance. This effect particularly comes into play for the common-gate (CG) and common-drain (CD) amplifier configurations. Interestingly, the body effect for certain cases can increase the amplifier’s voltage gain, as we shall determine for one of the amplifier circuits under investigation.

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Task 1 – Current Mirror / Active Load I D2 = K p (V sg + V tp )^2 V S = 10 V; V G = 7.95 V R 3 = V G / 100 μA = 79.5 kΩ Using a potentiometer we were able to determine exactly the value of R 3 needed for the current mirror to supply 100 μA. R 3 = 100 kΩ. Task 2 – Common Source (CS) Amplifier Circuit 100 μA = K N (V GS – V TN )^2
V G = 1.67 V; V S = (100 μA)(51 Ω) V GS = 1.67 V 10*(R 2 / (R 1 + R 2 )) = 1.67 V; Since the current through R 1 and R 2 should be = 10 μA, R 1 = (10 V – 1.67 V) / 10 μA R 1 = 833 kΩ; R 2 = 167 kΩ Task 3 – Adjusting the Q-point Using R 1 = 843 kΩ, we are using a 500 kΩ potentiometer for R 2 and an ammeter to figure out the exact value of R 2 needed for the drain voltage of the NMOS device to be half the supply voltage. We found that the pot resistance which made V 0 = V DD / 2 = 5V to be R 2 = 173.9 kΩ.

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