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PEx2SP05

# PEx2SP05 - ECE3040B PRACTICE EXAM 2 Dr S.C Shen ECE3040B...

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3/13/2005 ECE3040B PRACTICE EXAM 2 © Dr. S.C. Shen Georgia Institute of Technology School of ECE 1 ECE3040B Practice Exam #2 (Spring 2005) Last Name _____________ First Name __________________________ gtID #: ___________________________ DO NOT LOOK AT ANY PAGES OF THE EXAM EXCEPT FOR THIS ONE UNTIL I TELL YOU TO BEGIN THE TEST Instructions: If you have questions regarding the exam during the exam, please raise your hand and the instructor will come to you Closed book and no notes allowed No pre-programmable calculators with pre-programmed equations should be used in this exam All work to be completed on the test booklet (use back of sheets if necessary) Box final answer and include the correct units Show all steps can calculation required to get the correct answer for full credit Useful information is included in the following pages Don’t forget to put your name on the exam (above ) Total time of exam: 80minutes Total points are 110 pts. Please scan questions first and form your exam strategy for your maximum possible credits. Report any and all ethic violations to the instructor immediately . At the end of the exam, sign your name to one of the following : I DID NOT observe any ethical violations during this exam: I observed any ethical violations during this exam:

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3/13/2005 ECE3040B PRACTICE EXAM 2 © Dr. S.C. Shen Georgia Institute of Technology School of ECE 2 DATA AND EQUATION SHEET Constants: kT (300K) = 0.026 eV k = 1.38x10 -23 J/K h = 4.14x10 -15 eV-sec q = 1.6x10 -19 C m o = 9.11x10 -31 kg k = 8.62x10 -5 eV/K E (eV) = 1.24/ λ (μm) Material Parameters at 300K Semiconductor Lattice Constant (Å) Bandgap (eV) Band Dielectric Constant Ge 5.64 0.66 Indirect 16.0 Si 5.43 1.12 Indirect 11.9 GaAs 5.63 1.42 Direct 13.1 GaP 5.45 2.26 Indirect 11.1 InP 5.86 1.35 Direct 12.4 ZnS 5.42 3.68 Direct 5.2 n i (Ge, 300K) = 2.5 x 10 13 cm -3 n i (Si, 300K) = 1.05 x 10 10 cm -3 n i (GaAs, 300K)= 2 x 10 6 cm -3 Silicon DOS effective mass : m n /m o =1.18, m p /m o =0.81 GaAs DOS effective mass : m n /m o =0.067, m p /m o =0.52 1 | 2 0 * 2 0 4 * 1 ) 4 ( 2 : = = n H s n s n B E K m m K q m E rgy BindingEne h ε π ) ( 2 2 2 * k E m = h Conventional unit cell for Diamond Lattice K cm m m N K cm m m N Silicon p V n
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• Spring '07
• HAMBLEN
• Bipolar junction transistor, P-n junction, Georgia Institute of Technology, School of ECE, ECE3040B Practice Exam

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PEx2SP05 - ECE3040B PRACTICE EXAM 2 Dr S.C Shen ECE3040B...

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